Escalated Photocurrent with Excitation Energy in Dual-Gated MoTe2

Jun Suk Kim, Minh Dao Tran, Sung Tae Kim, Daehan Yoo, Sang Hyun Oh, Ji Hee Kim, Young Hee Lee

Research output: Contribution to journalArticlepeer-review

Abstract

Although van der Waals-layered transition metal dichalcogenides from transient absorption spectroscopy have successfully demonstrated an ideal carrier multiplication (CM) performance with an onset of nearly 2Eg, interpretation of the CM effect from the optical approach remains unresolved owing to the complexity of many-body electron-hole pairs. We demonstrate the escalated photocurrent with excitation photon energy by fabricating the dual-gate p-n junction of a MoTe2 film on a transparent substrate. Electrons and holes were efficiently extracted by eliminating the Schottky barriers in the metal contact and minimizing multiple reflections. The photocurrent was elevated proportionately to the excitation photon energy. The boosted quantum efficiency confirms the multiple electron-hole pair generation of >2Eg, consistent with CM results from an optical approach, pushing the solar cell efficiency beyond the Shockley-Queisser limit.

Original languageEnglish (US)
Pages (from-to)1976-1981
Number of pages6
JournalNano letters
Volume21
Issue number5
DOIs
StatePublished - Mar 10 2021

Bibliographical note

Funding Information:
This work was supported by the Institute for Basic Science (IBS-R011-D1).

Publisher Copyright:
© 2021 American Chemical Society.

Keywords

  • carrier multiplication
  • molybdenum ditelluride
  • p-n junction
  • photovoltaic
  • solar cell

PubMed: MeSH publication types

  • Journal Article

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