Erratum: Expression of concern: Properties of Mg doped GaAs grown by molecular beam epitaxy, Jong Su Kim, I.H. Bae, J.Y. Leem, S.K. Noh, J.I. Lee, J.S. Kim, S.M. Kim, J.S. Son, Minhyon Jeon, J. Crystal Growth. vol. 226, pp. 52–56, 2001 (Properties of Mg doped GaAs grown by molecular beam epitaxy (2001) 226(1) (52–56), (S0022024801013641), (10.1016/S0022-0248(01)01364-1))

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Abstract

Concern has been raised about the publication of this article as we found similarities of this paper in the paper: Growth of high quality Mg-doped GaAs by molecular beam epitaxy and its properties, Jong Su Kim, D.Y. Lee and I.H. Bae, J.I. Lee, S.K. Noh, Jin Soo Kim, Gu Hyun Kim, Seungil Ban, Se-Kyung Kang, S.M. Kim, J.Y. Leem, Minhyon Jeon and J.S. Son, Journal of the Korean Physical Society 39, S518–S521 December 2001, https://doi.org/10.3938/jkps.39.S518. The simultaneous submission or duplicate publication of a manuscript, and the lack of consistent authorship attribution are considered serious breaches of scientific ethics.

Original languageEnglish (US)
Article number126038
JournalJournal of Crystal Growth
Volume560-561
DOIs
StatePublished - Apr 15 2021

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