Erratum: Doping efficienty, dopant location and oxidation of Si nanocrystals (Applied Physics Letters (2008) 92 (123102))

X. D. Pi; R. Gresback; R. W. Liptak; S. A. Campbell; U. Kortshagen

doi:10.1063/1.2954009

Erratum: Doping efficienty, dopant location and oxidation of Si nanocrystals (Applied Physics Letters (2008) 92 (123102))

X. D. Pi
, R. Gresback
, R. W. Liptak
, S. A. Campbell
, U. Kortshagen

Research output: Contribution to journal › Comment/debate › peer-review

Original language	English (US)
Article number	259902
Journal	Applied Physics Letters
Volume	92
Issue number	25
DOIs	https://doi.org/10.1063/1.2954009
State	Published - 2008

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10.1063/1.2954009

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title = "Erratum: Doping efficienty, dopant location and oxidation of Si nanocrystals (Applied Physics Letters (2008) 92 (123102))",

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AU - Kortshagen, U.

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IS - 25

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Erratum: Doping efficienty, dopant location and oxidation of Si nanocrystals (Applied Physics Letters (2008) 92 (123102))

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