Epitaxial superconducting δ-mon films grown by a chemical solution method

Yingying Zhang, Nestor Haberkorn, Filip Ronning, Haiyan Wang, Nathan A. Mara, Mujin Zhuo, Li Chen, Joon Hwan Lee, Karen J. Blackmore, Eve Bauer, Anthony K. Burrell, Thomas M. McCleskey, Marilyn E. Hawley, Roland K. Schulze, Leonardo Civale, Tsuyoshi Tajima, Quanxi Jia

Research output: Contribution to journalArticle

36 Scopus citations

Abstract

The synthesis of pure δ-MoN with desired superconducting properties usually requires extreme conditions, such as high temperature and high pressure, which hinders its fundamental studies and applications. Herein, by using a chemical solution method, epitaxial δ-MoN thin films have been grown on c-cut Al 2O 3 substrates at a temperature lower than 900 °C and an ambient pressure. The films are phase pure and show a T c of 13.0 K with a sharp transition. In addition, the films show a high critical field and excellent current carrying capabilities, which further prove the superior quality of these chemically prepared epitaxial thin films.

Original languageEnglish (US)
Pages (from-to)20735-20737
Number of pages3
JournalJournal of the American Chemical Society
Volume133
Issue number51
DOIs
StatePublished - Dec 28 2011
Externally publishedYes

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    Zhang, Y., Haberkorn, N., Ronning, F., Wang, H., Mara, N. A., Zhuo, M., Chen, L., Lee, J. H., Blackmore, K. J., Bauer, E., Burrell, A. K., McCleskey, T. M., Hawley, M. E., Schulze, R. K., Civale, L., Tajima, T., & Jia, Q. (2011). Epitaxial superconducting δ-mon films grown by a chemical solution method. Journal of the American Chemical Society, 133(51), 20735-20737. https://doi.org/10.1021/ja208868k