Epitaxial SrTiO3 films with dielectric constants exceeding 25,000

Zhifei Yang, Dooyong Lee, Jin Yue, Judith Gabel, Tien-lin Lee, Richard D. James, Scott A. Chambers, Bharat Jalan

Research output: Contribution to journalArticlepeer-review

5 Scopus citations


SrTiO 3 (STO) is an incipient ferroelectric perovskite oxide for which the onset of ferroelectric order is suppressed by quantum fluctuations. This property results in a very large increase in static dielectric constant from ∼300 at room temperature to ∼20,000 at liquid He temperature in bulk single crystals. However, the low-temperature dielectric constant of epitaxial STO films is typically a few hundred to a few thousand. Here, we use all-epitaxial capacitors of the form n-STO/undoped STO/n-STO (001) prepared by hybrid molecular beam epitaxy, to demonstrate intrinsic dielectric constants of an unstrained STO (001) film exceeding 25,000. We show that the n-STO/undoped STO interface plays a critically important role not previously considered in determining the dielectric properties that must be properly accounted for to determine the intrinsic dielectric constant.

Original languageEnglish (US)
Article numbere2202189119
Pages (from-to)e2202189119
JournalProceedings of the National Academy of Sciences of the United States of America
Issue number23
StatePublished - Jun 7 2022

Bibliographical note

Funding Information:
ACKNOWLEDGMENTS. We thank Boris Shklovskii and Yi Huang for useful discussions. This work was primarily supported by the Air Force Office of Scientific Research through Grant FA9550-21-1-0025 and National Science Foundation (NSF) through the Materials Research Science and Engineering Centers (MRSEC) program under Award DMR-2011401. This work is also partially supported by the Vannevar Bush Faculty Fellowship and by the NSF through DMR-1741801. MBE growth was supported by the US Department of Energy (DOE) through Grant DE-SC002021. Parts of this work were carried out at the Characterization Facility, University of Minnesota, which receives partial support from the NSF through the MRSEC program under Award DMR-2011401. Device fabrication was carried out at the Minnesota Nano Center, which is supported by the NSF through the National Nano Coordinated Infrastructure under Award ECCS-1542202. The work at Pacific Northwest National Laboratory was supported by the US DOE, Office of Science, Division of Materials Sciences and Engineering under Award 10122.

Publisher Copyright:
Copyright © 2022 the Author(s).


  • antiferrodistortive transition
  • dielectric constant
  • ferroelectricity
  • SrTiO3 film
  • SrTiO film
  • Oxides
  • Electrons

MRSEC Support

  • Primary

PubMed: MeSH publication types

  • Journal Article


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