Epitaxial SrTiO3 films with dielectric constants exceeding 25,000

Zhifei Yang, Dooyong Lee, Jin Yue, Judith Gabel, Tien-lin Lee, Richard D. James, Scott A. Chambers, Bharat Jalan

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

SignificanceSemiconductor interfaces are among the most important in use in modern technology. The properties they exhibit can either enable or disable the characteristics of the materials they connect for functional performance. While much is known about important junctions involving conventional semiconductors such as Si and GaAs, there are several unsolved mysteries surrounding interfaces between oxide semiconductors. Here we resolve a long-standing issue concerning the measurement of anomalously low dielectric constants in SrTiO 3 films with record high electron mobilities. We show that the junction between doped and undoped SrTiO 3 required to make dielectric constant measurements masks the dielectric properties of the undoped film. Through modeling, we extract the latter and show that it is much higher than previously measured.

Original languageEnglish (US)
Article numbere2202189119
Pages (from-to)e2202189119
JournalProceedings of the National Academy of Sciences of the United States of America
Volume119
Issue number23
DOIs
StatePublished - Jun 7 2022

Bibliographical note

Funding Information:
ACKNOWLEDGMENTS. We thank Boris Shklovskii and Yi Huang for useful discussions. This work was primarily supported by the Air Force Office of Scientific Research through Grant FA9550-21-1-0025 and National Science Foundation (NSF) through the Materials Research Science and Engineering Centers (MRSEC) program under Award DMR-2011401. This work is also partially supported by the Vannevar Bush Faculty Fellowship and by the NSF through DMR-1741801. MBE growth was supported by the US Department of Energy (DOE) through Grant DE-SC002021. Parts of this work were carried out at the Characterization Facility, University of Minnesota, which receives partial support from the NSF through the MRSEC program under Award DMR-2011401. Device fabrication was carried out at the Minnesota Nano Center, which is supported by the NSF through the National Nano Coordinated Infrastructure under Award ECCS-1542202. The work at Pacific Northwest National Laboratory was supported by the US DOE, Office of Science, Division of Materials Sciences and Engineering under Award 10122.

Publisher Copyright:
Copyright © 2022 the Author(s).

Keywords

  • antiferrodistortive transition
  • dielectric constant
  • ferroelectricity
  • SrTiO3 film

How much support was provided by MRSEC?

  • Primary

PubMed: MeSH publication types

  • Journal Article

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