Epitaxial SrTiO3 films with dielectric constants exceeding 25,000

Zhifei Yang; Dooyong Lee; Jin Yue; Judith Gabel; Tien-lin Lee; Richard D. James; Scott A. Chambers; Bharat Jalan

doi:10.1073/pnas.2202189119

Epitaxial SrTiO3 films with dielectric constants exceeding 25,000

Zhifei Yang, Dooyong Lee, Jin Yue, Judith Gabel, Tien-lin Lee, Richard D. James, Scott A. Chambers, Bharat Jalan

Research output: Contribution to journal › Article › peer-review

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Abstract

SrTiO ₃ (STO) is an incipient ferroelectric perovskite oxide for which the onset of ferroelectric order is suppressed by quantum fluctuations. This property results in a very large increase in static dielectric constant from ∼300 at room temperature to ∼20,000 at liquid He temperature in bulk single crystals. However, the low-temperature dielectric constant of epitaxial STO films is typically a few hundred to a few thousand. Here, we use all-epitaxial capacitors of the form n-STO/undoped STO/n-STO (001) prepared by hybrid molecular beam epitaxy, to demonstrate intrinsic dielectric constants of an unstrained STO (001) film exceeding 25,000. We show that the n-STO/undoped STO interface plays a critically important role not previously considered in determining the dielectric properties that must be properly accounted for to determine the intrinsic dielectric constant.

Original language	English (US)
Article number	e2202189119
Pages (from-to)	e2202189119
Journal	Proceedings of the National Academy of Sciences of the United States of America
Volume	119
Issue number	23
DOIs	https://doi.org/10.1073/pnas.2202189119 https://doi.org/10.1073/pnas.2202189119
State	Published - Jun 7 2022

Bibliographical note

Funding Information:
ACKNOWLEDGMENTS. We thank Boris Shklovskii and Yi Huang for useful discussions. This work was primarily supported by the Air Force Office of Scientific Research through Grant FA9550-21-1-0025 and National Science Foundation (NSF) through the Materials Research Science and Engineering Centers (MRSEC) program under Award DMR-2011401. This work is also partially supported by the Vannevar Bush Faculty Fellowship and by the NSF through DMR-1741801. MBE growth was supported by the US Department of Energy (DOE) through Grant DE-SC002021. Parts of this work were carried out at the Characterization Facility, University of Minnesota, which receives partial support from the NSF through the MRSEC program under Award DMR-2011401. Device fabrication was carried out at the Minnesota Nano Center, which is supported by the NSF through the National Nano Coordinated Infrastructure under Award ECCS-1542202. The work at Pacific Northwest National Laboratory was supported by the US DOE, Office of Science, Division of Materials Sciences and Engineering under Award 10122.

Publisher Copyright:
Copyright © 2022 the Author(s).

Keywords

antiferrodistortive transition
dielectric constant
ferroelectricity
SrTiO3 film
SrTiO film
Oxides
Electrons

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Primary

PubMed: MeSH publication types

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https://pnas.org/doi/full/10.1073/pnas.2202189119

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Yang, Z., Lee, D., Yue, J., Gabel, J., Lee, T., James, R. D., Chambers, S. A., & Jalan, B. (2022). Epitaxial SrTiO3 films with dielectric constants exceeding 25,000. Proceedings of the National Academy of Sciences of the United States of America, 119(23), e2202189119. Article e2202189119. https://doi.org/10.1073/pnas.2202189119, https://doi.org/10.1073/pnas.2202189119

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abstract = "SrTiO 3 (STO) is an incipient ferroelectric perovskite oxide for which the onset of ferroelectric order is suppressed by quantum fluctuations. This property results in a very large increase in static dielectric constant from ∼300 at room temperature to ∼20,000 at liquid He temperature in bulk single crystals. However, the low-temperature dielectric constant of epitaxial STO films is typically a few hundred to a few thousand. Here, we use all-epitaxial capacitors of the form n-STO/undoped STO/n-STO (001) prepared by hybrid molecular beam epitaxy, to demonstrate intrinsic dielectric constants of an unstrained STO (001) film exceeding 25,000. We show that the n-STO/undoped STO interface plays a critically important role not previously considered in determining the dielectric properties that must be properly accounted for to determine the intrinsic dielectric constant.",

keywords = "antiferrodistortive transition, dielectric constant, ferroelectricity, SrTiO3 film, SrTiO film, Oxides, Electrons",

author = "Zhifei Yang and Dooyong Lee and Jin Yue and Judith Gabel and Tien-lin Lee and James, {Richard D.} and Chambers, {Scott A.} and Bharat Jalan",

note = "Funding Information: ACKNOWLEDGMENTS. We thank Boris Shklovskii and Yi Huang for useful discussions. This work was primarily supported by the Air Force Office of Scientific Research through Grant FA9550-21-1-0025 and National Science Foundation (NSF) through the Materials Research Science and Engineering Centers (MRSEC) program under Award DMR-2011401. This work is also partially supported by the Vannevar Bush Faculty Fellowship and by the NSF through DMR-1741801. MBE growth was supported by the US Department of Energy (DOE) through Grant DE-SC002021. Parts of this work were carried out at the Characterization Facility, University of Minnesota, which receives partial support from the NSF through the MRSEC program under Award DMR-2011401. Device fabrication was carried out at the Minnesota Nano Center, which is supported by the NSF through the National Nano Coordinated Infrastructure under Award ECCS-1542202. The work at Pacific Northwest National Laboratory was supported by the US DOE, Office of Science, Division of Materials Sciences and Engineering under Award 10122. Publisher Copyright: Copyright {\textcopyright} 2022 the Author(s).",

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T1 - Epitaxial SrTiO3 films with dielectric constants exceeding 25,000

AU - Yang, Zhifei

AU - Lee, Dooyong

AU - Yue, Jin

AU - Gabel, Judith

AU - Lee, Tien-lin

AU - James, Richard D.

AU - Chambers, Scott A.

AU - Jalan, Bharat

N1 - Funding Information: ACKNOWLEDGMENTS. We thank Boris Shklovskii and Yi Huang for useful discussions. This work was primarily supported by the Air Force Office of Scientific Research through Grant FA9550-21-1-0025 and National Science Foundation (NSF) through the Materials Research Science and Engineering Centers (MRSEC) program under Award DMR-2011401. This work is also partially supported by the Vannevar Bush Faculty Fellowship and by the NSF through DMR-1741801. MBE growth was supported by the US Department of Energy (DOE) through Grant DE-SC002021. Parts of this work were carried out at the Characterization Facility, University of Minnesota, which receives partial support from the NSF through the MRSEC program under Award DMR-2011401. Device fabrication was carried out at the Minnesota Nano Center, which is supported by the NSF through the National Nano Coordinated Infrastructure under Award ECCS-1542202. The work at Pacific Northwest National Laboratory was supported by the US DOE, Office of Science, Division of Materials Sciences and Engineering under Award 10122. Publisher Copyright: Copyright © 2022 the Author(s).

PY - 2022/6/7

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N2 - SrTiO 3 (STO) is an incipient ferroelectric perovskite oxide for which the onset of ferroelectric order is suppressed by quantum fluctuations. This property results in a very large increase in static dielectric constant from ∼300 at room temperature to ∼20,000 at liquid He temperature in bulk single crystals. However, the low-temperature dielectric constant of epitaxial STO films is typically a few hundred to a few thousand. Here, we use all-epitaxial capacitors of the form n-STO/undoped STO/n-STO (001) prepared by hybrid molecular beam epitaxy, to demonstrate intrinsic dielectric constants of an unstrained STO (001) film exceeding 25,000. We show that the n-STO/undoped STO interface plays a critically important role not previously considered in determining the dielectric properties that must be properly accounted for to determine the intrinsic dielectric constant.

AB - SrTiO 3 (STO) is an incipient ferroelectric perovskite oxide for which the onset of ferroelectric order is suppressed by quantum fluctuations. This property results in a very large increase in static dielectric constant from ∼300 at room temperature to ∼20,000 at liquid He temperature in bulk single crystals. However, the low-temperature dielectric constant of epitaxial STO films is typically a few hundred to a few thousand. Here, we use all-epitaxial capacitors of the form n-STO/undoped STO/n-STO (001) prepared by hybrid molecular beam epitaxy, to demonstrate intrinsic dielectric constants of an unstrained STO (001) film exceeding 25,000. We show that the n-STO/undoped STO interface plays a critically important role not previously considered in determining the dielectric properties that must be properly accounted for to determine the intrinsic dielectric constant.

KW - antiferrodistortive transition

KW - dielectric constant

KW - ferroelectricity

KW - SrTiO3 film

KW - SrTiO film

KW - Oxides

KW - Electrons

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U2 - 10.1073/pnas.2202189119

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M3 - Article

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JO - Proceedings of the National Academy of Sciences of the United States of America

JF - Proceedings of the National Academy of Sciences of the United States of America

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M1 - e2202189119

ER -

Epitaxial SrTiO3 films with dielectric constants exceeding 25,000

Abstract

Bibliographical note

Keywords

MRSEC Support

PubMed: MeSH publication types

Publisher link

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University of Minnesota Materials Research Science and Engineering Center (DMR-2011401)

IRG-1: Ionic Control of Materials

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Epitaxial SrTiO3 films with dielectric constants exceeding 25,000

Abstract

Bibliographical note

Keywords

MRSEC Support

PubMed: MeSH publication types

Publisher link

Find It

Other files and links

Fingerprint

Projects

University of Minnesota Materials Research Science and Engineering Center (DMR-2011401)

IRG-1: Ionic Control of Materials

Cite this