Epitaxial growth of ferromagnetic Ni2MnGa on GaAs(001) using NiGa interlayers

J. W. Dong; L. C. Chen; J. Q. Xie; T. A.R. Müller; D. M. Carr; C. J. Palmstrøm; S. McKernan; Q. Pan; R. D. James

doi:10.1063/1.1326461

Epitaxial growth of ferromagnetic Ni₂MnGa on GaAs(001) using NiGa interlayers

J. W. Dong
, L. C. Chen
, J. Q. Xie
, T. A.R. Müller
, D. M. Carr
, C. J. Palmstrøm
, S. McKernan
, Q. Pan
, R. D. James

Research output: Contribution to journal › Article › peer-review

56 Scopus citations

Abstract

Heusler alloy Ni₂MnGa thin films have been grown pseudomorphically on a relaxed NiGa interlayer on GaAs(001) by molecular-beam epitaxy. In situ reflection high-energy electron diffraction patterns, ex situ x-ray diffraction, and cross-sectional view transmission electron microscopy electron diffraction patterns confirm the single-crystal growth of Ni₂MnGa. The films grow pseudomorphically on the relaxed NiGa interlayer with a tetragonal structure (a=b=5.79 Å and c=6.07 Å). Magnetic measurements using vibrating sample and superconducting quantum interference device magnetometers reveal Ni₂MnGa to have an in-plane easy axis and a Curie temperature ∼350 K.

Original language	English (US)
Pages (from-to)	7357-7359
Number of pages	3
Journal	Journal of Applied Physics
Volume	88
Issue number	12
DOIs	https://doi.org/10.1063/1.1326461
State	Published - Dec 15 2000

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title = "Epitaxial growth of ferromagnetic Ni2MnGa on GaAs(001) using NiGa interlayers",

abstract = "Heusler alloy Ni2MnGa thin films have been grown pseudomorphically on a relaxed NiGa interlayer on GaAs(001) by molecular-beam epitaxy. In situ reflection high-energy electron diffraction patterns, ex situ x-ray diffraction, and cross-sectional view transmission electron microscopy electron diffraction patterns confirm the single-crystal growth of Ni2MnGa. The films grow pseudomorphically on the relaxed NiGa interlayer with a tetragonal structure (a=b=5.79 {\AA} and c=6.07 {\AA}). Magnetic measurements using vibrating sample and superconducting quantum interference device magnetometers reveal Ni2MnGa to have an in-plane easy axis and a Curie temperature ∼350 K.",

author = "Dong, \{J. W.\} and Chen, \{L. C.\} and Xie, \{J. Q.\} and M{\"u}ller, \{T. A.R.\} and Carr, \{D. M.\} and Palmstr{\o}m, \{C. J.\} and S. McKernan and Q. Pan and James, \{R. D.\}",

year = "2000",

month = dec,

day = "15",

doi = "10.1063/1.1326461",

language = "English (US)",

volume = "88",

pages = "7357--7359",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

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}

TY - JOUR

T1 - Epitaxial growth of ferromagnetic Ni2MnGa on GaAs(001) using NiGa interlayers

AU - Dong, J. W.

AU - Chen, L. C.

AU - Xie, J. Q.

AU - Müller, T. A.R.

AU - Carr, D. M.

AU - Palmstrøm, C. J.

AU - McKernan, S.

AU - Pan, Q.

AU - James, R. D.

PY - 2000/12/15

Y1 - 2000/12/15

N2 - Heusler alloy Ni2MnGa thin films have been grown pseudomorphically on a relaxed NiGa interlayer on GaAs(001) by molecular-beam epitaxy. In situ reflection high-energy electron diffraction patterns, ex situ x-ray diffraction, and cross-sectional view transmission electron microscopy electron diffraction patterns confirm the single-crystal growth of Ni2MnGa. The films grow pseudomorphically on the relaxed NiGa interlayer with a tetragonal structure (a=b=5.79 Å and c=6.07 Å). Magnetic measurements using vibrating sample and superconducting quantum interference device magnetometers reveal Ni2MnGa to have an in-plane easy axis and a Curie temperature ∼350 K.

AB - Heusler alloy Ni2MnGa thin films have been grown pseudomorphically on a relaxed NiGa interlayer on GaAs(001) by molecular-beam epitaxy. In situ reflection high-energy electron diffraction patterns, ex situ x-ray diffraction, and cross-sectional view transmission electron microscopy electron diffraction patterns confirm the single-crystal growth of Ni2MnGa. The films grow pseudomorphically on the relaxed NiGa interlayer with a tetragonal structure (a=b=5.79 Å and c=6.07 Å). Magnetic measurements using vibrating sample and superconducting quantum interference device magnetometers reveal Ni2MnGa to have an in-plane easy axis and a Curie temperature ∼350 K.

UR - https://www.scopus.com/pages/publications/0037670843

UR - https://www.scopus.com/pages/publications/0037670843#tab=citedBy

U2 - 10.1063/1.1326461

DO - 10.1063/1.1326461

M3 - Article

AN - SCOPUS:0037670843

SN - 0021-8979

VL - 88

SP - 7357

EP - 7359

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 12

ER -

Epitaxial growth of ferromagnetic Ni₂MnGa on GaAs(001) using NiGa interlayers

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