Epitaxial growth of ferromagnetic Ni2MnGa on GaAs(001) using NiGa interlayers

J. W. Dong; L. C. Chen; J. Q. Xie; T. A.R. Müller; D. M. Carr; C. J. Palmstrøm; S. McKernan; Q. Pan; R. D. James

doi:10.1063/1.1326461

Epitaxial growth of ferromagnetic Ni₂MnGa on GaAs(001) using NiGa interlayers

J. W. Dong, L. C. Chen, J. Q. Xie, T. A.R. Müller, D. M. Carr, C. J. Palmstrøm, S. McKernan, Q. Pan, R. D. James

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Abstract

Heusler alloy Ni₂MnGa thin films have been grown pseudomorphically on a relaxed NiGa interlayer on GaAs(001) by molecular-beam epitaxy. In situ reflection high-energy electron diffraction patterns, ex situ x-ray diffraction, and cross-sectional view transmission electron microscopy electron diffraction patterns confirm the single-crystal growth of Ni₂MnGa. The films grow pseudomorphically on the relaxed NiGa interlayer with a tetragonal structure (a=b=5.79 Å and c=6.07 Å). Magnetic measurements using vibrating sample and superconducting quantum interference device magnetometers reveal Ni₂MnGa to have an in-plane easy axis and a Curie temperature ∼350 K.

Original language	English (US)
Pages (from-to)	7357-7359
Number of pages	3
Journal	Journal of Applied Physics
Volume	88
Issue number	12
DOIs	https://doi.org/10.1063/1.1326461
State	Published - Dec 15 2000

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title = "Epitaxial growth of ferromagnetic Ni2MnGa on GaAs(001) using NiGa interlayers",

abstract = "Heusler alloy Ni2MnGa thin films have been grown pseudomorphically on a relaxed NiGa interlayer on GaAs(001) by molecular-beam epitaxy. In situ reflection high-energy electron diffraction patterns, ex situ x-ray diffraction, and cross-sectional view transmission electron microscopy electron diffraction patterns confirm the single-crystal growth of Ni2MnGa. The films grow pseudomorphically on the relaxed NiGa interlayer with a tetragonal structure (a=b=5.79 {\AA} and c=6.07 {\AA}). Magnetic measurements using vibrating sample and superconducting quantum interference device magnetometers reveal Ni2MnGa to have an in-plane easy axis and a Curie temperature ∼350 K.",

author = "Dong, {J. W.} and Chen, {L. C.} and Xie, {J. Q.} and M{\"u}ller, {T. A.R.} and Carr, {D. M.} and Palmstr{\o}m, {C. J.} and S. McKernan and Q. Pan and James, {R. D.}",

year = "2000",

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doi = "10.1063/1.1326461",

language = "English (US)",

volume = "88",

pages = "7357--7359",

journal = "Journal of Applied Physics",

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publisher = "American Institute of Physics",

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TY - JOUR

T1 - Epitaxial growth of ferromagnetic Ni2MnGa on GaAs(001) using NiGa interlayers

AU - Dong, J. W.

AU - Chen, L. C.

AU - Xie, J. Q.

AU - Müller, T. A.R.

AU - Carr, D. M.

AU - Palmstrøm, C. J.

AU - McKernan, S.

AU - Pan, Q.

AU - James, R. D.

PY - 2000/12/15

Y1 - 2000/12/15

N2 - Heusler alloy Ni2MnGa thin films have been grown pseudomorphically on a relaxed NiGa interlayer on GaAs(001) by molecular-beam epitaxy. In situ reflection high-energy electron diffraction patterns, ex situ x-ray diffraction, and cross-sectional view transmission electron microscopy electron diffraction patterns confirm the single-crystal growth of Ni2MnGa. The films grow pseudomorphically on the relaxed NiGa interlayer with a tetragonal structure (a=b=5.79 Å and c=6.07 Å). Magnetic measurements using vibrating sample and superconducting quantum interference device magnetometers reveal Ni2MnGa to have an in-plane easy axis and a Curie temperature ∼350 K.

AB - Heusler alloy Ni2MnGa thin films have been grown pseudomorphically on a relaxed NiGa interlayer on GaAs(001) by molecular-beam epitaxy. In situ reflection high-energy electron diffraction patterns, ex situ x-ray diffraction, and cross-sectional view transmission electron microscopy electron diffraction patterns confirm the single-crystal growth of Ni2MnGa. The films grow pseudomorphically on the relaxed NiGa interlayer with a tetragonal structure (a=b=5.79 Å and c=6.07 Å). Magnetic measurements using vibrating sample and superconducting quantum interference device magnetometers reveal Ni2MnGa to have an in-plane easy axis and a Curie temperature ∼350 K.

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DO - 10.1063/1.1326461

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EP - 7359

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 12

ER -

Epitaxial growth of ferromagnetic Ni₂MnGa on GaAs(001) using NiGa interlayers

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