Epitaxial growth of ferromagnetic Ni2MnGa on GaAs(001) using NiGa interlayers

J. W. Dong, L. C. Chen, J. Q. Xie, T. A.R. Müller, D. M. Carr, C. J. Palmstrøm, S. McKernan, Q. Pan, R. D. James

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Abstract

Heusler alloy Ni2MnGa thin films have been grown pseudomorphically on a relaxed NiGa interlayer on GaAs(001) by molecular-beam epitaxy. In situ reflection high-energy electron diffraction patterns, ex situ x-ray diffraction, and cross-sectional view transmission electron microscopy electron diffraction patterns confirm the single-crystal growth of Ni2MnGa. The films grow pseudomorphically on the relaxed NiGa interlayer with a tetragonal structure (a=b=5.79 Å and c=6.07 Å). Magnetic measurements using vibrating sample and superconducting quantum interference device magnetometers reveal Ni2MnGa to have an in-plane easy axis and a Curie temperature ∼350 K.

Original languageEnglish (US)
Pages (from-to)7357-7359
Number of pages3
JournalJournal of Applied Physics
Volume88
Issue number12
DOIs
StatePublished - Dec 15 2000

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