Epitaxial growth and characterization of single crystal ferromagnetic shape memory Co2NiGa films

T. C. Shih, J. Q. Xie, J. W. Dong, X. Y. Dong, S. Srivastava, C. Adelmann, S. McKernan, R. D. James, C. J. Palmstroøm

Research output: Contribution to journalConference article

4 Scopus citations

Abstract

Single crystal ferromagnetic Co2NiGa films were grown by molecular beam epitaxy on GaAs (001) substrates using 6 monolayers of ErAs as an interlayer. In situ reflection high energy electron diffraction, x-ray diffraction, and transmission electron microscopy show that the Co 2NiGa films were grown as a tetragonally distorted B2-like single crystal with a = 2.83 Å and c = 2.99 Å. The magnetic measurements show no evidence of martensitic transformation from the Al / Co2NiGa / ErAs / GaAs / Al0.6Ga0.4As / GaAs (001) heterostructure. The room temperature saturation magnetization of the Co2NiGa films was 390 emu/cm3 and the Curie temperature was 670 K.

Original languageEnglish (US)
Pages (from-to)35-42
Number of pages8
JournalFerroelectrics
Volume342
Issue number1
DOIs
StatePublished - Dec 1 2006
EventProceedings of the U.S. Army Workshop on Advanced Active Thin Films For Meso-Micro Scale Applications - Destin, FL, United States
Duration: May 10 2005May 12 2005

Keywords

  • CoNiGa
  • Ferromagnetic shape memory alloy
  • Full Heusler alloy
  • Molecular beam epitaxy
  • Single crystal films

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    Shih, T. C., Xie, J. Q., Dong, J. W., Dong, X. Y., Srivastava, S., Adelmann, C., McKernan, S., James, R. D., & Palmstroøm, C. J. (2006). Epitaxial growth and characterization of single crystal ferromagnetic shape memory Co2NiGa films. Ferroelectrics, 342(1), 35-42. https://doi.org/10.1080/00150190600946096