Epitaxial growth and characterization of Bi1−xSbx thin films on (0001) sapphire substrates

Yu Sheng Huang, Saurav Islam, Yongxi Ou, Supriya Ghosh, Anthony Richardella, K. Andre Mkhoyan, Nitin Samarth

Research output: Contribution to journalArticlepeer-review

Abstract

We report the molecular beam epitaxy of Bi1−xSbx thin films (0 ≤ x ≤ 1) on sapphire (0001) substrates using a thin (Bi,Sb)2Te3 buffer layer. The characterization of the films using reflection high energy diffraction, x-ray diffraction, atomic force microscopy, and scanning transmission electron microscopy reveals the epitaxial growth of films of reasonable structural quality. This is further confirmed via x-ray diffraction pole figures that determine the epitaxial registry between the thin film and the substrate. We further investigate the microscopic structure of thin films via Raman spectroscopy, demonstrating how the vibrational modes vary as the composition changes and discussing the implications for the crystal structure. We also characterize the samples using electrical transport measurements.

Original languageEnglish (US)
Article number021106
JournalAPL Materials
Volume12
Issue number2
DOIs
StatePublished - Feb 1 2024

Bibliographical note

Publisher Copyright:
© 2024 Author(s).

Fingerprint

Dive into the research topics of 'Epitaxial growth and characterization of Bi1−xSbx thin films on (0001) sapphire substrates'. Together they form a unique fingerprint.

Cite this