Epitaxial ferromagnetic metal/GaAs(100) heterostructures

L. C. Chen, J. W. Dong, B. D. Schultz, C. J. Palmstrøm, J. Berezovsky, A. Isakovic, P. A. Crowell, N. Tabat

Research output: Contribution to journalArticle

30 Scopus citations

Abstract

Ferromagnetic bcc-FexCo1-x(100) films have been successfully grown on GaAs(100) and ScyEr1-yAs(100) by molecular beam epitaxy. X-ray diffraction combined with reflection high energy electron diffraction and low energy electron diffraction patterns revealed the epitaxial orientation of bcc-FexCo 1-x(100)〈010〉∥GaAs(100)〈010〉 and bcc-FexCo1-x(100) 〈010〉∥ScyEr1-yAs(100)〈010〉. Rutherford backscattering channeling minimum yields, Xmin∼3%, suggest epitaxial films of high crystalline quality. Vibrating sample magnetometry measurements show in-plane uniaxial anisotropy and fourfold in-plane anisotropy for FexCo1-x grown on GaAs(100) and ScyEr1-yAs(100), respectively. The difference in magnetic anisotropy is interpreted as arising from the ScyEr1-yAs interlayer altering the surface symmetry from twofold symmetry for GaAs(100) to fourfold symmetry. Misoriented substrates were also used to increase the step density in the [Oil] direction, which induced an additional uniaxial anisotropy with a [Oil] easy axis and a [01 1̄] hard axis. This step structure symmetry-induced magnetic anisotropy generated a split field ∼50 Oe in the hard axis for bcc-FexCo1-x(100) grown on ScyEr1-xAs(100) surfaces.

Original languageEnglish (US)
Pages (from-to)2057-2062
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume18
Issue number4
StatePublished - Dec 1 2000

Fingerprint Dive into the research topics of 'Epitaxial ferromagnetic metal/GaAs(100) heterostructures'. Together they form a unique fingerprint.

  • Cite this

    Chen, L. C., Dong, J. W., Schultz, B. D., Palmstrøm, C. J., Berezovsky, J., Isakovic, A., Crowell, P. A., & Tabat, N. (2000). Epitaxial ferromagnetic metal/GaAs(100) heterostructures. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 18(4), 2057-2062.