Epitaxial ferroelectric heterostructures fabricated by selective area epitaxy of SrRuO 3 using an MgO mask

J. Karthik, Anoop R. Damodaran, Lane W. Martin

Research output: Contribution to journalArticlepeer-review

50 Scopus citations

Abstract

Illustration of a new high-temperature hard-mask process based on traditional lithography and selective wet-etching of MgO. The hard mask is compatible with standard nano-lithography techniques and heat treatments in excess of 1000 °C. Here, this technique is applied to produce temperature-stable contacts that give rise to low leakage, improved fatigue properties, and excellent high-temperature stability in ferroelectric thin-film capacitors.

Original languageEnglish (US)
Pages (from-to)1610-1615
Number of pages6
JournalAdvanced Materials
Volume24
Issue number12
DOIs
StatePublished - Mar 22 2012
Externally publishedYes

Keywords

  • PbZr Ti O
  • dielectric materials
  • epitaxial heterostructures
  • ferroelectrics
  • hard mask

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