Ensemble Monte Carlo study of electron transport in bulk indium nitride

E. Bellotti, B. Doshi, K. F. Brennan, P. P. Ruden

Research output: Contribution to journalArticle

Abstract

Ensemble Monte Carlo calculations of electron transport at high applied electric field strengths in bulk, wurtzite phase InN are presented. The calculations are performed using a full band Monte Carlo simulation that includes a pseudopotential band structure, all of the relevant phonon scattering agents, and numerically derived impact ionization transition rates. The full details of the first five conduction bands, which extend in energy to about 8 eV above the conduction band minimum, are included in the simulation. The electron initiated impact ionization coefficients and quantum yield are calculated using the full band Monte Carlo model. Comparison is made to previous calculations for bulk GaN and ZnS. It is found that owing to the narrower band gap in InN, a lower breakdown field exists than in either GaN or ZnS.

Original languageEnglish (US)
Pages (from-to)6d
JournalMRS Internet Journal of Nitride Semiconductor Research
Volume4
Issue numberSUPPL. 1
StatePublished - Dec 1 1999

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    Bellotti, E., Doshi, B., Brennan, K. F., & Ruden, P. P. (1999). Ensemble Monte Carlo study of electron transport in bulk indium nitride. MRS Internet Journal of Nitride Semiconductor Research, 4(SUPPL. 1), 6d.