Abstract
We demonstrate, using high-mobility SrTiO3 thin films grown by molecular beam epitaxy, that stress has a pronounced influence on the electron mobility in this prototype complex oxide. Moderate strains result in more than 300% increases in the electron mobilities with values exceeding 120 000 cm 2 /V s and no apparent saturation in the mobility gains. The results point to a range of opportunities to tailor high-mobility oxide heterostructure properties and open up ways to explore oxide physics.
| Original language | English (US) |
|---|---|
| Article number | 132102 |
| Journal | Applied Physics Letters |
| Volume | 98 |
| Issue number | 13 |
| DOIs | |
| State | Published - Mar 28 2011 |
Bibliographical note
Funding Information:The authors thank John English and Doug Rehn for their help with the design of three-point bending set-up and Sandeep Ponnuru and Anderson Janotti for discussions. The work was supported by a MURI program of the Army Research Office (Grant No. W911-NF-09-1-0398) and by the U.S. National Science Foundation (Grant No. DMR-1006640). The work made use of the MRL Central facilities supported by the MRSEC Program of the National Science Foundation under Award No. DMR 05-20415 and the UCSB Nanofabrication Facility, a part of the NSF-funded NNIN network.