Enhancing the electron mobility of SrTiO3 with strain

Bharat Jalan, S. James Allen, Glenn E. Beltz, Pouya Moetakef, Susanne Stemmer

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Abstract

We demonstrate, using high-mobility SrTiO3 thin films grown by molecular beam epitaxy, that stress has a pronounced influence on the electron mobility in this prototype complex oxide. Moderate strains result in more than 300% increases in the electron mobilities with values exceeding 120 000 cm 2 /V s and no apparent saturation in the mobility gains. The results point to a range of opportunities to tailor high-mobility oxide heterostructure properties and open up ways to explore oxide physics.

Original languageEnglish (US)
Article number132102
JournalApplied Physics Letters
Volume98
Issue number13
DOIs
StatePublished - Mar 28 2011

Bibliographical note

Funding Information:
The authors thank John English and Doug Rehn for their help with the design of three-point bending set-up and Sandeep Ponnuru and Anderson Janotti for discussions. The work was supported by a MURI program of the Army Research Office (Grant No. W911-NF-09-1-0398) and by the U.S. National Science Foundation (Grant No. DMR-1006640). The work made use of the MRL Central facilities supported by the MRSEC Program of the National Science Foundation under Award No. DMR 05-20415 and the UCSB Nanofabrication Facility, a part of the NSF-funded NNIN network.

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