Enhancement of voltage controlled magnetic anisotropy (VCMA) through electron depletion

Thomas J. Peterson, Anthony Hurben, Wei Jiang, Delin Zhang, Brandon Zink, Yu Chia Chen, Yihong Fan, Tony Low, Jian Ping Wang

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Recent advancement in the switching of perpendicular magnetic tunnel junctions with an electric field has been a milestone for realizing ultra-low energy memory and computing devices. To integrate with current spin-transfer torque-magnetic tunnel junction and spin-orbit torque-magnetic tunnel junction devices, the typical linear fJ/V m range voltage controlled magnetic anisotropy (VCMA) needs to be significantly enhanced with approaches that include new materials or stack engineering. A possible bidirectional and 1.1 pJ/V m VCMA effect has been predicted by using heavily electron-depleted Fe/MgO interfaces. To improve upon existing VCMA technology, we have proposed inserting high work function materials underneath the magnetic layer. This will deplete electrons from the magnetic layer biasing the gating window into the electron-depleted regime, where the pJ/V m and bidirectional VCMA effect was predicted. We have demonstrated tunable control of the Ta/Pd(x)/Ta underlayer's work function. By varying the Pd thickness (x) from 0 to 10 nm, we have observed a tunable change in the Ta layer's work function from 4.32 to 4.90 eV. To investigate the extent of the electron depletion as a function of the Pd thickness in the underlayer, we have performed DFT calculations on supercells of Ta/Pd(x)/Ta/CoFe/MgO, which demonstrate that electron depletion will not be fully screened at the CoFe/MgO interface. Gated pillar devices with Hall cross geometries were fabricated and tested to extract the anisotropy change as a function of applied gate voltage for samples with various Pd thicknesses. The electron-depleted Pd samples show three to six times VCMA improvement compared to the electron accumulated Ta control sample.

Original languageEnglish (US)
Article number153904
JournalJournal of Applied Physics
Issue number15
StatePublished - Apr 21 2022

Bibliographical note

Funding Information:
This work was supported, in part, by ASCENT, one of the six centers in JUMP, a Semiconductor Research Corporation (SRC) program sponsored by DARPA. This material is based upon work supported, in part, by the National Science Foundation under the Scalable Parallelism in the Extreme (SPX) Grant under Award No. CCF-1725420. Y. Fan, Dr. W. Jiang, and Dr. T. Low are supported by the SMART, one of the seven centers of nCORE, a Semiconductor Research Corporation program, sponsored by the National Institute of Standards and Technology (NIST). The TEM was performed by Dr. Jason Myers at the College of Science and Engineering (CSE) Characterization Facility at the University of Minnesota (UMN), supported, in part, by the NSF through the UMN MRSEC program. Portions of this work were conducted in the Minnesota Nano Center, which is supported by the National Science Foundation through the National Nano Coordinated Infrastructure Network (NNCI) under Award No. ECCS-2025124.

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© 2022 Author(s).

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