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Enhancement-mode buried-channel In0.7Ga0.3As/ In0.52Al0.48 MOSFETs with high-κ gate dielectrics
Yanning Sun, E. W. Kiewra, S. J. Koester, N. Ruiz, A. Callegari, K. E. Fogel, D. K. Sadana, J. Fompeyrine, D. J. Webb, J. P. Locquet, M. Sousa, R. Germann, K. T. Shiu, S. R. Forrest
Research output: Contribution to journal › Article › peer-review
66
Scopus
citations