Enhancement-mode buried-channel In0.7Ga0.3As/ In0.52Al0.48 MOSFETs with high-κ gate dielectrics

Yanning Sun; E. W. Kiewra; S. J. Koester; N. Ruiz; A. Callegari; K. E. Fogel; D. K. Sadana; J. Fompeyrine; D. J. Webb; J. P. Locquet; M. Sousa; R. Germann; K. T. Shiu; S. R. Forrest

doi:10.1109/LED.2007.896813

Enhancement-mode buried-channel In_0.7Ga_0.3As/ In_0.52Al_0.48 MOSFETs with high-κ gate dielectrics

Yanning Sun
, E. W. Kiewra
, S. J. Koester
, N. Ruiz
, A. Callegari
, K. E. Fogel
, D. K. Sadana
, J. Fompeyrine
, D. J. Webb
, J. P. Locquet
, M. Sousa
, R. Germann
, K. T. Shiu
, S. R. Forrest

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

64 Scopus citations

Abstract

The operation of long- and short-channel enhancement-mode In_0.7Ga_0.3As-channel MOSFETs with high-κ gate dielectrics are demonstrated for the first time. The devices utilize an undoped buried-channel design. For a gate length of 5 μm, the long-channel devices have V_t a subthreshold slope of 150 mV/ dec, an equivalent oxide thickness of 4.4 +/- 0.3 nm, and a peak effective mobility of 1100cm² For a gate length of 260 nm, the short-channel devices have V_t and a subthreshold slope of 200 mV/dec. Compared with Schottky-gated high-electron-mobility transistor devices, both long- and short-channel MOSFETs have two to four orders of magnitude lower gate leakage.

Original language	English (US)
Pages (from-to)	473-475
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	28
Issue number	6
DOIs	https://doi.org/10.1109/LED.2007.896813
State	Published - Jun 2007

Keywords

Buried channel
Enhancement mode
High-κ
InGaAs
MOSFET

Publisher link

10.1109/LED.2007.896813

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Sun, Y., Kiewra, E. W., Koester, S. J., Ruiz, N., Callegari, A., Fogel, K. E., Sadana, D. K., Fompeyrine, J., Webb, D. J., Locquet, J. P., Sousa, M., Germann, R., Shiu, K. T., & Forrest, S. R. (2007). Enhancement-mode buried-channel In_0.7Ga_0.3As/ In_0.52Al_0.48 MOSFETs with high-κ gate dielectrics. IEEE Electron Device Letters, 28(6), 473-475. https://doi.org/10.1109/LED.2007.896813

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title = "Enhancement-mode buried-channel In0.7Ga0.3As/ In0.52Al0.48 MOSFETs with high-κ gate dielectrics",

abstract = "The operation of long- and short-channel enhancement-mode In0.7Ga0.3As-channel MOSFETs with high-κ gate dielectrics are demonstrated for the first time. The devices utilize an undoped buried-channel design. For a gate length of 5 μm, the long-channel devices have Vt a subthreshold slope of 150 mV/ dec, an equivalent oxide thickness of 4.4 +/- 0.3 nm, and a peak effective mobility of 1100cm2 For a gate length of 260 nm, the short-channel devices have Vt and a subthreshold slope of 200 mV/dec. Compared with Schottky-gated high-electron-mobility transistor devices, both long- and short-channel MOSFETs have two to four orders of magnitude lower gate leakage.",

keywords = "Buried channel, Enhancement mode, High-κ, InGaAs, MOSFET",

author = "Yanning Sun and Kiewra, \{E. W.\} and Koester, \{S. J.\} and N. Ruiz and A. Callegari and Fogel, \{K. E.\} and Sadana, \{D. K.\} and J. Fompeyrine and Webb, \{D. J.\} and Locquet, \{J. P.\} and M. Sousa and R. Germann and Shiu, \{K. T.\} and Forrest, \{S. R.\}",

year = "2007",

month = jun,

doi = "10.1109/LED.2007.896813",

language = "English (US)",

volume = "28",

pages = "473--475",

journal = "IEEE Electron Device Letters",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Enhancement-mode buried-channel In0.7Ga0.3As/ In0.52Al0.48 MOSFETs with high-κ gate dielectrics

AU - Sun, Yanning

AU - Kiewra, E. W.

AU - Koester, S. J.

AU - Ruiz, N.

AU - Callegari, A.

AU - Fogel, K. E.

AU - Sadana, D. K.

AU - Fompeyrine, J.

AU - Webb, D. J.

AU - Locquet, J. P.

AU - Sousa, M.

AU - Germann, R.

AU - Shiu, K. T.

AU - Forrest, S. R.

PY - 2007/6

Y1 - 2007/6

N2 - The operation of long- and short-channel enhancement-mode In0.7Ga0.3As-channel MOSFETs with high-κ gate dielectrics are demonstrated for the first time. The devices utilize an undoped buried-channel design. For a gate length of 5 μm, the long-channel devices have Vt a subthreshold slope of 150 mV/ dec, an equivalent oxide thickness of 4.4 +/- 0.3 nm, and a peak effective mobility of 1100cm2 For a gate length of 260 nm, the short-channel devices have Vt and a subthreshold slope of 200 mV/dec. Compared with Schottky-gated high-electron-mobility transistor devices, both long- and short-channel MOSFETs have two to four orders of magnitude lower gate leakage.

AB - The operation of long- and short-channel enhancement-mode In0.7Ga0.3As-channel MOSFETs with high-κ gate dielectrics are demonstrated for the first time. The devices utilize an undoped buried-channel design. For a gate length of 5 μm, the long-channel devices have Vt a subthreshold slope of 150 mV/ dec, an equivalent oxide thickness of 4.4 +/- 0.3 nm, and a peak effective mobility of 1100cm2 For a gate length of 260 nm, the short-channel devices have Vt and a subthreshold slope of 200 mV/dec. Compared with Schottky-gated high-electron-mobility transistor devices, both long- and short-channel MOSFETs have two to four orders of magnitude lower gate leakage.

KW - Buried channel

KW - Enhancement mode

KW - High-κ

KW - InGaAs

KW - MOSFET

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DO - 10.1109/LED.2007.896813

M3 - Article

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SP - 473

EP - 475

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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