Enhanced surface cation mobility on Sn delta-doped (Ga,Al)As

G. S. Petrich; A. M. Dabiran; P. I. Cohen

doi:10.1063/1.108205

Enhanced surface cation mobility on Sn delta-doped (Ga,Al)As

G. S. Petrich, A. M. Dabiran, P. I. Cohen

Electrical and Computer Engineering

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12 Scopus citations

Abstract

During the growth of GaAs and AlAs on vicinal GaAs(100) by molecular-beam epitaxy, reflection high energy electron diffraction was used to measure the transition temperature between two-dimensional nucleation and pure step propagation when submonolayer amounts of Sn were present on the surface. On samples misoriented by 0.5°to either the [011] or the [011̄] direction, the transition temperature decreased by approximately 100°C after the deposition of 0.6 monolayers of Sn, indicating that the Ga mobility increased. The presence of Sn also increased the surface mobility of the Al adatoms on AlAs(100) surfaces as indicated by the annealing behavior of the AlAs surface at 600°C.

Original language	English (US)
Pages (from-to)	162-164
Number of pages	3
Journal	Applied Physics Letters
Volume	61
Issue number	2
DOIs	https://doi.org/10.1063/1.108205
State	Published - 1992

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title = "Enhanced surface cation mobility on Sn delta-doped (Ga,Al)As",

abstract = "During the growth of GaAs and AlAs on vicinal GaAs(100) by molecular-beam epitaxy, reflection high energy electron diffraction was used to measure the transition temperature between two-dimensional nucleation and pure step propagation when submonolayer amounts of Sn were present on the surface. On samples misoriented by 0.5°to either the [011] or the [01{\=1}] direction, the transition temperature decreased by approximately 100°C after the deposition of 0.6 monolayers of Sn, indicating that the Ga mobility increased. The presence of Sn also increased the surface mobility of the Al adatoms on AlAs(100) surfaces as indicated by the annealing behavior of the AlAs surface at 600°C.",

author = "Petrich, {G. S.} and Dabiran, {A. M.} and Cohen, {P. I.}",

year = "1992",

doi = "10.1063/1.108205",

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journal = "Applied Physics Letters",

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T1 - Enhanced surface cation mobility on Sn delta-doped (Ga,Al)As

AU - Petrich, G. S.

AU - Dabiran, A. M.

AU - Cohen, P. I.

PY - 1992

Y1 - 1992

N2 - During the growth of GaAs and AlAs on vicinal GaAs(100) by molecular-beam epitaxy, reflection high energy electron diffraction was used to measure the transition temperature between two-dimensional nucleation and pure step propagation when submonolayer amounts of Sn were present on the surface. On samples misoriented by 0.5°to either the [011] or the [011̄] direction, the transition temperature decreased by approximately 100°C after the deposition of 0.6 monolayers of Sn, indicating that the Ga mobility increased. The presence of Sn also increased the surface mobility of the Al adatoms on AlAs(100) surfaces as indicated by the annealing behavior of the AlAs surface at 600°C.

AB - During the growth of GaAs and AlAs on vicinal GaAs(100) by molecular-beam epitaxy, reflection high energy electron diffraction was used to measure the transition temperature between two-dimensional nucleation and pure step propagation when submonolayer amounts of Sn were present on the surface. On samples misoriented by 0.5°to either the [011] or the [011̄] direction, the transition temperature decreased by approximately 100°C after the deposition of 0.6 monolayers of Sn, indicating that the Ga mobility increased. The presence of Sn also increased the surface mobility of the Al adatoms on AlAs(100) surfaces as indicated by the annealing behavior of the AlAs surface at 600°C.

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JO - Applied Physics Letters

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ER -

Enhanced surface cation mobility on Sn delta-doped (Ga,Al)As

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