Abstract
The design, fabrication, and characterization of a stable InP MESFET with a delta-doped p+ layer are outlined. The 1 μm gate length MESFET has a transconductance of 110 mS/mm; the InP surface was not passivated or treated prior to the gate metal deposition. Measured fmax and fT are 11.6 GHz and 5.4 GHz respectively.
| Original language | English (US) |
|---|---|
| Title of host publication | Third Int Conf Indium Phosphide Relat Mater |
| Publisher | Publ by IEEE |
| Pages | 431-433 |
| Number of pages | 3 |
| ISBN (Print) | 0879426268 |
| State | Published - Dec 1 1991 |
| Event | Third International Conference on Indium Phosphide and Related Materials - Cardiff, Wales Duration: Apr 8 1991 → Apr 11 1991 |
Other
| Other | Third International Conference on Indium Phosphide and Related Materials |
|---|---|
| City | Cardiff, Wales |
| Period | 4/8/91 → 4/11/91 |