Enhanced Schottky barrier InP MESFETs

Z. Abid, A. Gopinath, F. Williamson, M. Nathan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

The design, fabrication, and characterization of a stable InP MESFET with a delta-doped p+ layer are outlined. The 1 μm gate length MESFET has a transconductance of 110 mS/mm; the InP surface was not passivated or treated prior to the gate metal deposition. Measured fmax and fT are 11.6 GHz and 5.4 GHz respectively.

Original languageEnglish (US)
Title of host publicationThird Int Conf Indium Phosphide Relat Mater
PublisherPubl by IEEE
Pages431-433
Number of pages3
ISBN (Print)0879426268
StatePublished - Dec 1 1991
EventThird International Conference on Indium Phosphide and Related Materials - Cardiff, Wales
Duration: Apr 8 1991Apr 11 1991

Other

OtherThird International Conference on Indium Phosphide and Related Materials
CityCardiff, Wales
Period4/8/914/11/91

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