Engineering SrSnO 3 Phases and Electron Mobility at Room Temperature Using Epitaxial Strain

Tianqi Wang, Abhinav Prakash, Yongqi Dong, Tristan Truttmann, Ashley Bucsek, Richard James, Dillon D. Fong, Jong Woo Kim, Philip J. Ryan, Hua Zhou, Turan Birol, Bharat Jalan

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

High-speed electronics require epitaxial films with exceptionally high carrier mobility at room temperature (RT). Alkaline-earth stannates with high RT mobility show outstanding prospects for oxide electronics operating at ambient temperatures. However, despite significant progress over the last few years, mobility in stannate films has been limited by dislocations because of the inability to grow fully coherent films. Here, we demonstrate the growth of coherent, strain-engineered phases of epitaxial SrSnO 3 (SSO) films using a radical-based molecular beam epitaxy approach. Compressive strain stabilized the high-symmetry tetragonal phase of SSO at RT, which, in bulk, exists only at temperatures between 1062 and 1295 K. We achieved a mobility enhancement of over 300% in doped films compared with the low-temperature orthorhombic polymorph. Using comprehensive temperature-dependent synchrotron-based X-ray measurements, electronic transport, and first principles calculations, crystal and electronic structures of SSO films were investigated as a function of strain. We argue that strain-engineered films of stannate will enable high mobility oxide electronics operating at RT with the added advantage of being optically transparent.

Original languageEnglish (US)
Pages (from-to)43802-43808
Number of pages7
JournalACS Applied Materials and Interfaces
Volume10
Issue number50
DOIs
StatePublished - Dec 19 2018

Fingerprint

Electron mobility
Temperature
Electronic equipment
Oxides
Epitaxial films
Carrier mobility
Polymorphism
Synchrotrons
Molecular beam epitaxy
Electronic structure
Crystal structure
Earth (planet)
X rays

Keywords

  • density functional theory
  • half-order diffraction
  • high mobility
  • hybrid molecular beam epitaxy
  • octahedral rotations
  • phase transition
  • strain engineering

How much support was provided by MRSEC?

  • Partial

Reporting period for MRSEC

  • Period 5

PubMed: MeSH publication types

  • Journal Article

Cite this

Engineering SrSnO 3 Phases and Electron Mobility at Room Temperature Using Epitaxial Strain . / Wang, Tianqi; Prakash, Abhinav; Dong, Yongqi; Truttmann, Tristan; Bucsek, Ashley; James, Richard; Fong, Dillon D.; Kim, Jong Woo; Ryan, Philip J.; Zhou, Hua; Birol, Turan; Jalan, Bharat.

In: ACS Applied Materials and Interfaces, Vol. 10, No. 50, 19.12.2018, p. 43802-43808.

Research output: Contribution to journalArticle

Wang, Tianqi ; Prakash, Abhinav ; Dong, Yongqi ; Truttmann, Tristan ; Bucsek, Ashley ; James, Richard ; Fong, Dillon D. ; Kim, Jong Woo ; Ryan, Philip J. ; Zhou, Hua ; Birol, Turan ; Jalan, Bharat. / Engineering SrSnO 3 Phases and Electron Mobility at Room Temperature Using Epitaxial Strain In: ACS Applied Materials and Interfaces. 2018 ; Vol. 10, No. 50. pp. 43802-43808.
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