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We investigate the ion gel gating of wide bandgap oxide, La-doped SrSnO 3 films grown using radical-based molecular beam epitaxy. An applied positive bias resulted in a reversible electrostatic control of sheet resistance over 3 orders of magnitude at low temperature driving sample from Mott variable range hopping to a weakly localized transport. Analysis of low temperature transport behavior revealed electron-electron interaction and weak localization effects to be the dominant scattering mechanisms. A large voltage window (â'4 V ≤ V g ≤ +4 V) was obtained for reversible electrostatic doping of SrSnO 3 films showing robustness of stannate with regards to redox chemistry with electrolyte gating irrespective of the bias type.
Bibliographical noteFunding Information:
The authors thank David Goldhaber Gordon and A. Kamenev for helpful discussion and Helin Wang for the help with ion gel preparation. This work was primarily supported by the UMN MRSEC program under Award Number DMR-1420013. Part of this work was supported through the Young Investigator Program of the Air Force Office of Scientific Research (AFOSR) through Grant FA9550-16-1-0205 and through DMR-1741801. Portions of this work were conducted in the Minnesota Nano Center, which is supported by the National Science Foundation through the National Nano Coordinated Infrastructure Network (NNCI) under Award Number ECCS-1542202. Sample structural characterizations were carried out at the University of Minnesota Characterization Facility, which receives partial support from NSF through the MRSEC program.
© 2019 American Chemical Society.
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PubMed: MeSH publication types
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