Electrostatic Control of Insulator–Metal Transition in La-doped SrSnO
              3
              Films

Laxman Raju Thoutam; Jin Yue; Abhinav Prakash; Tianqi Wang; Kavinraaj Ella Elangovan; Bharat Jalan

doi:10.1021/acsami.8b22034

Electrostatic Control of Insulator–Metal Transition in La-doped SrSnO 3 Films

Laxman Raju Thoutam, Jin Yue, Abhinav Prakash, Tianqi Wang, Kavinraaj Ella Elangovan, Bharat Jalan

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

We investigate the ion gel gating of wide bandgap oxide, La-doped SrSnO ₃ films grown using radical-based molecular beam epitaxy. An applied positive bias resulted in a reversible electrostatic control of sheet resistance over 3 orders of magnitude at low temperature driving sample from Mott variable range hopping to a weakly localized transport. Analysis of low temperature transport behavior revealed electron-electron interaction and weak localization effects to be the dominant scattering mechanisms. A large voltage window (â'4 V ≤ V _g ≤ +4 V) was obtained for reversible electrostatic doping of SrSnO ₃ films showing robustness of stannate with regards to redox chemistry with electrolyte gating irrespective of the bias type.

Original language	English (US)
Pages (from-to)	7666-7670
Number of pages	5
Journal	ACS applied materials & interfaces
Volume	11
Issue number	8
DOIs	https://doi.org/10.1021/acsami.8b22034
State	Published - Feb 27 2019

Bibliographical note

Funding Information:
The authors thank David Goldhaber Gordon and A. Kamenev for helpful discussion and Helin Wang for the help with ion gel preparation. This work was primarily supported by the UMN MRSEC program under Award Number DMR-1420013. Part of this work was supported through the Young Investigator Program of the Air Force Office of Scientific Research (AFOSR) through Grant FA9550-16-1-0205 and through DMR-1741801. Portions of this work were conducted in the Minnesota Nano Center, which is supported by the National Science Foundation through the National Nano Coordinated Infrastructure Network (NNCI) under Award Number ECCS-1542202. Sample structural characterizations were carried out at the University of Minnesota Characterization Facility, which receives partial support from NSF through the MRSEC program.

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© 2019 American Chemical Society.

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10.1021/acsami.8b22034

http://pubs.acs.org/doi/10.1021/acsami.8b22034

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MRSEC IRG-1: Electrostatic Control of Materials
Leighton, C. (Coordinator), Birol, T. (Senior Investigator), Fernandes, R. M. (Senior Investigator), Frisbie, D. (Senior Investigator), Goldman, A. M. (Senior Investigator), Greven, M. (Senior Investigator), Jalan, B. (Senior Investigator), Koester, S. J. (Senior Investigator), He, T. (Researcher), Jeong, J. S. (Researcher), Koirala, S. (Researcher), Paul, A. (Researcher), Thoutam, L. R. (Researcher) & Yu, G. (Researcher)
11/1/14 → 10/31/20
Project: Research project
University of Minnesota MRSEC (DMR-1420013)
Lodge, T. P. (PI)
11/1/14 → 10/31/20
Project: Research project

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title = "Electrostatic Control of Insulator–Metal Transition in La-doped SrSnO 3 Films",

abstract = "We investigate the ion gel gating of wide bandgap oxide, La-doped SrSnO 3 films grown using radical-based molecular beam epitaxy. An applied positive bias resulted in a reversible electrostatic control of sheet resistance over 3 orders of magnitude at low temperature driving sample from Mott variable range hopping to a weakly localized transport. Analysis of low temperature transport behavior revealed electron-electron interaction and weak localization effects to be the dominant scattering mechanisms. A large voltage window ({\^a}'4 V ≤ V g ≤ +4 V) was obtained for reversible electrostatic doping of SrSnO 3 films showing robustness of stannate with regards to redox chemistry with electrolyte gating irrespective of the bias type. ",

author = "Thoutam, {Laxman Raju} and Jin Yue and Abhinav Prakash and Tianqi Wang and Elangovan, {Kavinraaj Ella} and Bharat Jalan",

note = "Funding Information: The authors thank David Goldhaber Gordon and A. Kamenev for helpful discussion and Helin Wang for the help with ion gel preparation. This work was primarily supported by the UMN MRSEC program under Award Number DMR-1420013. Part of this work was supported through the Young Investigator Program of the Air Force Office of Scientific Research (AFOSR) through Grant FA9550-16-1-0205 and through DMR-1741801. Portions of this work were conducted in the Minnesota Nano Center, which is supported by the National Science Foundation through the National Nano Coordinated Infrastructure Network (NNCI) under Award Number ECCS-1542202. Sample structural characterizations were carried out at the University of Minnesota Characterization Facility, which receives partial support from NSF through the MRSEC program. Publisher Copyright: {\textcopyright} 2019 American Chemical Society.",

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doi = "10.1021/acsami.8b22034",

language = "English (US)",

volume = "11",

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AU - Thoutam, Laxman Raju

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AU - Elangovan, Kavinraaj Ella

AU - Jalan, Bharat

N1 - Funding Information: The authors thank David Goldhaber Gordon and A. Kamenev for helpful discussion and Helin Wang for the help with ion gel preparation. This work was primarily supported by the UMN MRSEC program under Award Number DMR-1420013. Part of this work was supported through the Young Investigator Program of the Air Force Office of Scientific Research (AFOSR) through Grant FA9550-16-1-0205 and through DMR-1741801. Portions of this work were conducted in the Minnesota Nano Center, which is supported by the National Science Foundation through the National Nano Coordinated Infrastructure Network (NNCI) under Award Number ECCS-1542202. Sample structural characterizations were carried out at the University of Minnesota Characterization Facility, which receives partial support from NSF through the MRSEC program. Publisher Copyright: © 2019 American Chemical Society.

PY - 2019/2/27

Y1 - 2019/2/27

N2 - We investigate the ion gel gating of wide bandgap oxide, La-doped SrSnO 3 films grown using radical-based molecular beam epitaxy. An applied positive bias resulted in a reversible electrostatic control of sheet resistance over 3 orders of magnitude at low temperature driving sample from Mott variable range hopping to a weakly localized transport. Analysis of low temperature transport behavior revealed electron-electron interaction and weak localization effects to be the dominant scattering mechanisms. A large voltage window (â'4 V ≤ V g ≤ +4 V) was obtained for reversible electrostatic doping of SrSnO 3 films showing robustness of stannate with regards to redox chemistry with electrolyte gating irrespective of the bias type.

AB - We investigate the ion gel gating of wide bandgap oxide, La-doped SrSnO 3 films grown using radical-based molecular beam epitaxy. An applied positive bias resulted in a reversible electrostatic control of sheet resistance over 3 orders of magnitude at low temperature driving sample from Mott variable range hopping to a weakly localized transport. Analysis of low temperature transport behavior revealed electron-electron interaction and weak localization effects to be the dominant scattering mechanisms. A large voltage window (â'4 V ≤ V g ≤ +4 V) was obtained for reversible electrostatic doping of SrSnO 3 films showing robustness of stannate with regards to redox chemistry with electrolyte gating irrespective of the bias type.

U2 - 10.1021/acsami.8b22034

DO - 10.1021/acsami.8b22034

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ER -

Electrostatic Control of Insulator–Metal Transition in La-doped SrSnO 3 Films

Abstract

Bibliographical note

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Projects

MRSEC IRG-1: Electrostatic Control of Materials

University of Minnesota MRSEC (DMR-1420013)

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