Electronic transport properties of graphene pn junction and its electron optics

Tony Low, M. S. Lundstrom

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

The electronic transport properties of graphene pn junctions are examined using the non-equilibrium green's function (NEGF) simulation approach. We then review the basic physics involved in the conductance modulation of a graphene pn junction. The understanding derived from these studies sets the stage for exploring the potential applications of Klein tunneling, negative refractive index, and total internal reflection for realization of novel electron optics devices and spatial manipulation of current flow.

Original languageEnglish (US)
Title of host publicationGraphene, Ge/III-V, and Emerging Materials for Post-CMOS Applications 2
Pages45-48
Number of pages4
Edition5
DOIs
StatePublished - Dec 29 2010
Event2nd International Symposium on Graphene, Ge/III-V and Emerging Materials for Post-CMOS Applications - 217th ECS Meeting - Vancouver, BC, Canada
Duration: Apr 26 2010Apr 29 2010

Publication series

NameECS Transactions
Number5
Volume28
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other2nd International Symposium on Graphene, Ge/III-V and Emerging Materials for Post-CMOS Applications - 217th ECS Meeting
Country/TerritoryCanada
CityVancouver, BC
Period4/26/104/29/10

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