Electronic transport properties of graphene pn junction and its electron optics

Tony Low, M. S. Lundstrom

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations


The electronic transport properties of graphene pn junctions are examined using the non-equilibrium green's function (NEGF) simulation approach. We then review the basic physics involved in the conductance modulation of a graphene pn junction. The understanding derived from these studies sets the stage for exploring the potential applications of Klein tunneling, negative refractive index, and total internal reflection for realization of novel electron optics devices and spatial manipulation of current flow.

Original languageEnglish (US)
Title of host publicationGraphene, Ge/III-V, and Emerging Materials for Post-CMOS Applications 2
PublisherElectrochemical Society Inc.
Number of pages4
ISBN (Electronic)9781607681458
ISBN (Print)9781566777957
StatePublished - 2010

Publication series

NameECS Transactions
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737


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