Electronic transport in doped amorphous silicon

J. Kakalios, R. A. Street

Research output: Contribution to journalArticlepeer-review

77 Scopus citations

Abstract

The temperature dependence of the dc dark conductivity of doped hydrogenated amorphous silicon is explained by the defect-compensation model of doping with the proposal that the structure is in metastable thermal equilibrium. Observed conductivity activation energies and preexponential factors can be accounted for quantitatively. When the localized state distribution is in thermal equilibrium, the conductivity preexponential factor is the Mott minimum metallic conductivity.

Original languageEnglish (US)
Pages (from-to)6014-6017
Number of pages4
JournalPhysical Review B
Volume34
Issue number8
DOIs
StatePublished - Jan 1 1986

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