Electronic transport in co-deposited hydrogenated amorphous/nanocrystalline thin films

Y. Adjallah, C. Blackwell, C. Anderson, U. Kortshagen, J. Kakalios

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Mixed-phase hydrogenated amorphous silicon thin films containing nanocrystalline silicon inclusions have been synthesized in a dual chamber co-deposition system. A PECVD deposition system produces small crystalline silicon particles (3-5 nm diameter) in a flow-through reactor, and injects these particles into a separate capacitively-coupled plasma chamber in which hydrogenated amorphous silicon is deposited. Raman spectroscopy is used to determine the volume fraction of nanocrystals in the mixed phase thin films, while infra-red spectroscopy characterizes the hydrogen bonding structure as a function of nanocrystalline concentration. At a moderate concentration of 5 nm silicon crystallites, the dark conductivity and photoconductivity are consistently found to be higher than in mixed phase films with either lower or higher densities of nanocrystalline inclusions.

Original languageEnglish (US)
Title of host publicationAmorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2008
Pages29-34
Number of pages6
Volume1066
StatePublished - Dec 1 2008
Event2008 MRS Spring Meeting - San Francisco, CA, United States
Duration: Mar 25 2008Mar 27 2008

Other

Other2008 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period3/25/083/27/08

Fingerprint Dive into the research topics of 'Electronic transport in co-deposited hydrogenated amorphous/nanocrystalline thin films'. Together they form a unique fingerprint.

Cite this