Electronic transport and recombination in amorphous semiconductors at low temperatures

B. I. Shklovskii, H. Fritzsche, S. D. Baranovskii

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The problem of simultaneous diffusion and recombination of electron-hole pairs, photoexcited in noncrystalline semiconductors at low temperatures, is reduced to a universal mathematical problem whose solution does not depend on the density-of-states function. We derive a general geminate-recombination function which at low light intensities describes the distribution of radiative recombination times. The low-temperature photoconductivity is found to depend only weakly on material parameters and agrees with experiments on hydrogenated amorphous silicon.

Original languageEnglish (US)
Pages (from-to)2989-2992
Number of pages4
JournalPhysical Review Letters
Issue number25
StatePublished - Jan 1 1989


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