Electronic structure of the Ni2MnIn/InAs (100) interface relevant to spin injection

K. A. Kilian, R. H. Victora

Research output: Contribution to journalConference articlepeer-review

19 Scopus citations

Abstract

The ferromagnet-semiconductor system consisting of the Heusler alloy Ni2MnIn and the semiconductor InAs has been proposed as a likely candidate for use in spin injection-based devices. To study the nature of the interface states in this system, we create a model (100) interface. Using a full-potential electronic structure code with a basis set of Slater-typo orbitals, we have calculated the moments and density of states (DOS) of each atom. We find that the magnetic moments of the Ni2MnIn are not killed at the interface. We compare the DOS of Ni2MnIn in the interface model with the DOS of the respective bulk material.

Original languageEnglish (US)
Pages (from-to)1976-1978
Number of pages3
JournalIEEE Transactions on Magnetics
Volume37
Issue number4 I
DOIs
StatePublished - Jul 2001
Event8th Joint Magnetism and Magnetic Materials -International Magnetic Conference- (MMM-Intermag) - San Antonio, TX, United States
Duration: Jan 7 2001Jan 11 2001

Bibliographical note

Funding Information:
Manuscript received October 13, 2000. This work was supported by the MRSEC Program of the National Science Foundation under Award DMR-9809364. The authors are with the Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455 USA (e-mail: {kilian; vic-tora}@ece.umn.edu). Publisher Item Identifier S 0018-9464(01)06184-2.

Keywords

  • Electronic structure
  • Interfaces
  • Spin injection

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