Electronic structure of the Ni2MnIn/InAs (100) interface relevant to spin injection

K. A. Kilian; R. H. Victora

doi:10.1109/20.951026

Electronic structure of the Ni₂MnIn/InAs (100) interface relevant to spin injection

K. A. Kilian, R. H. Victora

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

20 Scopus citations

Abstract

The ferromagnet-semiconductor system consisting of the Heusler alloy Ni₂MnIn and the semiconductor InAs has been proposed as a likely candidate for use in spin injection-based devices. To study the nature of the interface states in this system, we create a model (100) interface. Using a full-potential electronic structure code with a basis set of Slater-typo orbitals, we have calculated the moments and density of states (DOS) of each atom. We find that the magnetic moments of the Ni₂MnIn are not killed at the interface. We compare the DOS of Ni₂MnIn in the interface model with the DOS of the respective bulk material.

Original language	English (US)
Pages (from-to)	1976-1978
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	37
Issue number	4 I
DOIs	https://doi.org/10.1109/20.951026
State	Published - Jul 2001
Event	8th Joint Magnetism and Magnetic Materials -International Magnetic Conference- (MMM-Intermag) - San Antonio, TX, United States Duration: Jan 7 2001 → Jan 11 2001

Bibliographical note

Funding Information:
Manuscript received October 13, 2000. This work was supported by the MRSEC Program of the National Science Foundation under Award DMR-9809364. The authors are with the Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455 USA (e-mail: {kilian; vic-tora}@ece.umn.edu). Publisher Item Identifier S 0018-9464(01)06184-2.

Keywords

Electronic structure
Interfaces
Spin injection

Publisher link

10.1109/20.951026

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title = "Electronic structure of the Ni2MnIn/InAs (100) interface relevant to spin injection",

abstract = "The ferromagnet-semiconductor system consisting of the Heusler alloy Ni2MnIn and the semiconductor InAs has been proposed as a likely candidate for use in spin injection-based devices. To study the nature of the interface states in this system, we create a model (100) interface. Using a full-potential electronic structure code with a basis set of Slater-typo orbitals, we have calculated the moments and density of states (DOS) of each atom. We find that the magnetic moments of the Ni2MnIn are not killed at the interface. We compare the DOS of Ni2MnIn in the interface model with the DOS of the respective bulk material.",

keywords = "Electronic structure, Interfaces, Spin injection",

author = "Kilian, {K. A.} and Victora, {R. H.}",

note = "Funding Information: Manuscript received October 13, 2000. This work was supported by the MRSEC Program of the National Science Foundation under Award DMR-9809364. The authors are with the Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455 USA (e-mail: {kilian; vic-tora}@ece.umn.edu). Publisher Item Identifier S 0018-9464(01)06184-2.; 8th Joint Magnetism and Magnetic Materials -International Magnetic Conference- (MMM-Intermag) ; Conference date: 07-01-2001 Through 11-01-2001",

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AU - Victora, R. H.

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N2 - The ferromagnet-semiconductor system consisting of the Heusler alloy Ni2MnIn and the semiconductor InAs has been proposed as a likely candidate for use in spin injection-based devices. To study the nature of the interface states in this system, we create a model (100) interface. Using a full-potential electronic structure code with a basis set of Slater-typo orbitals, we have calculated the moments and density of states (DOS) of each atom. We find that the magnetic moments of the Ni2MnIn are not killed at the interface. We compare the DOS of Ni2MnIn in the interface model with the DOS of the respective bulk material.

AB - The ferromagnet-semiconductor system consisting of the Heusler alloy Ni2MnIn and the semiconductor InAs has been proposed as a likely candidate for use in spin injection-based devices. To study the nature of the interface states in this system, we create a model (100) interface. Using a full-potential electronic structure code with a basis set of Slater-typo orbitals, we have calculated the moments and density of states (DOS) of each atom. We find that the magnetic moments of the Ni2MnIn are not killed at the interface. We compare the DOS of Ni2MnIn in the interface model with the DOS of the respective bulk material.

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KW - Interfaces

KW - Spin injection

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