Electronic structure of [formula omitted] for use in spin injection

K. A. Kilian, R. H. Victora

Research output: Contribution to journalArticlepeer-review

100 Scopus citations

Abstract

Data and Das [S. Datta and B. Das, Appl. Phys. Lett. 56, 665 (1990)] proposed an electronic analog to the optoelectronic modulator which would employ spin injection from a ferromagnet into a semiconductor. We investigate the ferromagnet–semiconductor system consisting of the Heusler alloy [formula omitted] and the semiconductor InAs. Using a full-potential electronic structure code with a basis set of Slater-type orbitals, we have calculated the band structure of [formula omitted] We calculate the spin polarization for each atom. It resides primarily on the Mn atom (3.51), with a small moment (0.31) on the Ni. Interestingly, In has a very small moment (−0.04), which is antiferromagnetically coupled to the other atoms. Using a simple model, we estimate the transmittance of minority spins in three high-symmetry directions.

Original languageEnglish (US)
Pages (from-to)7064-7066
Number of pages3
JournalJournal of Applied Physics
Volume87
Issue number9
DOIs
StatePublished - May 1 2000

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