Electronic structure of delta-doped La:SrTiO 3 layers by hard x-ray photoelectron spectroscopy

A. M. Kaiser; A. X. Gray; G. Conti; B. Jalan; A. P. Kajdos; A. Gloskovskii; S. Ueda; Y. Yamashita; K. Kobayashi; W. Drube; S. Stemmer; C. S. Fadley

doi:10.1063/1.4731642

Electronic structure of delta-doped La:SrTiO ₃ layers by hard x-ray photoelectron spectroscopy

A. M. Kaiser, A. X. Gray, G. Conti, B. Jalan, A. P. Kajdos, A. Gloskovskii, S. Ueda, Y. Yamashita, K. Kobayashi, W. Drube, S. Stemmer, C. S. Fadley

Chemical Engineering and Materials Science

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

We have employed hard x-ray photoemission (HAXPES) to study a delta-doped SrTiO ₃ layer that consisted of a 3-nm thickness of La-doped SrTiO ₃ with 6 La embedded in a SrTiO ₃ film. Results are compared to a thick, uniformily doped La:SrTiO ₃ layer. We find no indication of a band offset for the delta-doped layer, but evidence of the presence of Ti ³ in both the thick sample and the delta-layer, and indications of a density of states increase near the Fermi energy in the delta-doped layer. These results further demonstrate that HAXPES is a powerful tool for the non-destructive investigation of deeply buried doped layers.

Original language	English (US)
Article number	261603
Journal	Applied Physics Letters
Volume	100
Issue number	26
DOIs	https://doi.org/10.1063/1.4731642
State	Published - Jun 25 2012

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Electronic structure of delta-doped La:SrTiO ₃ layers by hard x-ray photoelectron spectroscopy. / Kaiser, A. M.; Gray, A. X.; Conti, G.; Jalan, B.; Kajdos, A. P.; Gloskovskii, A.; Ueda, S.; Yamashita, Y.; Kobayashi, K.; Drube, W.; Stemmer, S.; Fadley, C. S.

In: Applied Physics Letters, Vol. 100, No. 26, 261603, 25.06.2012.

Research output: Contribution to journal › Article › peer-review

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title = "Electronic structure of delta-doped La:SrTiO 3 layers by hard x-ray photoelectron spectroscopy",

abstract = "We have employed hard x-ray photoemission (HAXPES) to study a delta-doped SrTiO 3 layer that consisted of a 3-nm thickness of La-doped SrTiO 3 with 6 La embedded in a SrTiO 3 film. Results are compared to a thick, uniformily doped La:SrTiO 3 layer. We find no indication of a band offset for the delta-doped layer, but evidence of the presence of Ti 3 in both the thick sample and the delta-layer, and indications of a density of states increase near the Fermi energy in the delta-doped layer. These results further demonstrate that HAXPES is a powerful tool for the non-destructive investigation of deeply buried doped layers.",

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T1 - Electronic structure of delta-doped La:SrTiO 3 layers by hard x-ray photoelectron spectroscopy

AU - Kaiser, A. M.

AU - Gray, A. X.

AU - Conti, G.

AU - Jalan, B.

AU - Kajdos, A. P.

AU - Gloskovskii, A.

AU - Ueda, S.

AU - Yamashita, Y.

AU - Kobayashi, K.

AU - Drube, W.

AU - Stemmer, S.

AU - Fadley, C. S.

PY - 2012/6/25

Y1 - 2012/6/25

N2 - We have employed hard x-ray photoemission (HAXPES) to study a delta-doped SrTiO 3 layer that consisted of a 3-nm thickness of La-doped SrTiO 3 with 6 La embedded in a SrTiO 3 film. Results are compared to a thick, uniformily doped La:SrTiO 3 layer. We find no indication of a band offset for the delta-doped layer, but evidence of the presence of Ti 3 in both the thick sample and the delta-layer, and indications of a density of states increase near the Fermi energy in the delta-doped layer. These results further demonstrate that HAXPES is a powerful tool for the non-destructive investigation of deeply buried doped layers.

AB - We have employed hard x-ray photoemission (HAXPES) to study a delta-doped SrTiO 3 layer that consisted of a 3-nm thickness of La-doped SrTiO 3 with 6 La embedded in a SrTiO 3 film. Results are compared to a thick, uniformily doped La:SrTiO 3 layer. We find no indication of a band offset for the delta-doped layer, but evidence of the presence of Ti 3 in both the thick sample and the delta-layer, and indications of a density of states increase near the Fermi energy in the delta-doped layer. These results further demonstrate that HAXPES is a powerful tool for the non-destructive investigation of deeply buried doped layers.

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