Abstract
We have employed hard x-ray photoemission (HAXPES) to study a delta-doped SrTiO 3 layer that consisted of a 3-nm thickness of La-doped SrTiO 3 with 6 La embedded in a SrTiO 3 film. Results are compared to a thick, uniformily doped La:SrTiO 3 layer. We find no indication of a band offset for the delta-doped layer, but evidence of the presence of Ti 3 in both the thick sample and the delta-layer, and indications of a density of states increase near the Fermi energy in the delta-doped layer. These results further demonstrate that HAXPES is a powerful tool for the non-destructive investigation of deeply buried doped layers.
Original language | English (US) |
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Article number | 261603 |
Journal | Applied Physics Letters |
Volume | 100 |
Issue number | 26 |
DOIs | |
State | Published - Jun 25 2012 |