Electronic structure of delta-doped La:SrTiO 3 layers by hard x-ray photoelectron spectroscopy

A. M. Kaiser, A. X. Gray, G. Conti, B. Jalan, A. P. Kajdos, A. Gloskovskii, S. Ueda, Y. Yamashita, K. Kobayashi, W. Drube, S. Stemmer, C. S. Fadley

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Abstract

We have employed hard x-ray photoemission (HAXPES) to study a delta-doped SrTiO 3 layer that consisted of a 3-nm thickness of La-doped SrTiO 3 with 6 La embedded in a SrTiO 3 film. Results are compared to a thick, uniformily doped La:SrTiO 3 layer. We find no indication of a band offset for the delta-doped layer, but evidence of the presence of Ti 3 in both the thick sample and the delta-layer, and indications of a density of states increase near the Fermi energy in the delta-doped layer. These results further demonstrate that HAXPES is a powerful tool for the non-destructive investigation of deeply buried doped layers.

Original languageEnglish (US)
Article number261603
JournalApplied Physics Letters
Volume100
Issue number26
DOIs
StatePublished - Jun 25 2012

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