Electronic structure of BaSnO3 investigated by high-energy-resolution electron energy-loss spectroscopy and ab initio calculations

Hwanhui Yun, Mehmet Topsakal, Abhinav Prakash, Koustav Ganguly, Chris Leighton, Bharat Jalan, Renata M. Wentzcovitch, K. Andre Mkhoyan, Jong Seok Jeong

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

There has been growing interest in perovskite BaSnO3 due to its desirable properties for oxide electronic devices, including high electron mobility at room temperature and optical transparency. As these electronic and optical properties originate largely from the electronic structure of the material, here the basic electronic structure of epitaxially grown BaSnO3 films is studied using high-energy-resolution electron energy-loss spectroscopy in a transmission electron microscope and ab initio calculations. This study provides a detailed description of the dielectric function of BaSnO3, including the energies of bulk plasmon excitations and critical interband electronic transitions, the band structure and partial densities of states, the measured band gap, and more.

Original languageEnglish (US)
Article number031503
JournalJournal of Vacuum Science and Technology A
Volume36
Issue number3
DOIs
StatePublished - May 1 2018

How much support was provided by MRSEC?

  • Partial

Reporting period for MRSEC

  • Period 4

Fingerprint Dive into the research topics of 'Electronic structure of BaSnO<sub>3</sub> investigated by high-energy-resolution electron energy-loss spectroscopy and ab initio calculations'. Together they form a unique fingerprint.

Cite this