Electronic structure model for n- and p-type silicon quantum dots

T. N. Fang, P. Paul Ruden

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We present effective mass, single-particle calculations of the electronic structure of n-and p-type silicon quantum dots. The structures investigated approximate silicon quantum dots fabricated on 〈001〉-oriented SIMOX wafers. The effects of possible built-in strain are investigated in the framework of deformation potential induced splitting of the six degenerate conduction band valleys and the splitting of the degeneracy at the top of the bulk valence band. We present the energy levels and their degeneracies as functions of the dimensions of simple tetragonal model quantum dots. Our results are relevant for silicon quantum dots that are sufficiently small such as to lead to a predominance of the confinement energy over the Coulomb energy.

Original languageEnglish (US)
Pages (from-to)589-596
Number of pages8
JournalSuperlattices and Microstructures
Issue number4
StatePublished - Dec 1997

Bibliographical note

Funding Information:
Acknowledgements—This work was supported in part by a DARPA/ONR ULTRA contract. Helpful discussions with S. Y. Chou, E. Leobandung, and L. Guo are gratefully acknowledged.


  • Quantum dots
  • Silicon nanostructures


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