Electronic states and cyclotron resonance in n-type InMnAs

D. Sanders, Y. Sun, V. Kyrychenko, J. Stanton, A. Khodaparast, A. Zudov, J. Kono, H. Matsuda, N. Miura, H. Munekata

Research output: Contribution to journalArticlepeer-review

49 Scopus citations


We present a theory for electronic and magneto-optical properties of n-type In1-xMnxAs magnetic alloy semiconductors in a high magnetic field B‖ẑ. We use an eight-band Pidgeon-Brown model generalized to include the wave vector (kz) dependence of the electronic states as well as s-d and p-d exchange interactions with localized Mn d electrons. Calculated conduction-band Landau levels exhibit effective masses and g factors that are strongly dependent on temperature, magnetic field, Mn concentration (x), and kz. Cyclotron resonance (CR) spectra are computed using Fermi’s golden rule and compared with ultrahigh-magnetic-field (>50 T) CR experiments, which show that the electron CR peak position is sensitive to x. Detailed comparison between theory and experiment allowed us to extract the s-d and p-d exchange parameters α and β. We find that not only α but also β affects the electron mass because of the strong interband coupling in this narrow-gap semiconductor. In addition, we derive analytical expressions for effective masses and g factors within the eight-band model. Results indicates that (α-β) is the crucial parameter that determines the exchange interaction correction to the cyclotron masses. These findings should be useful for designing novel devices based on ferromagnetic semiconductors.

Original languageEnglish (US)
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number16
StatePublished - 2003


Dive into the research topics of 'Electronic states and cyclotron resonance in n-type InMnAs'. Together they form a unique fingerprint.

Cite this