Electronic charge densities at valence and conduction band edges of ZnSe and CdTe

Renata M. Wentzcovitch, Steven L. Richardson, Marvin L. Cohen

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18 Scopus citations


The empirical pseudopotential method (EPM) is used to calculate electronic charge densities at selected k points of the valence and conduction band edges of two II-VI semiconductors: ZnSe and CdTe.

Original languageEnglish (US)
Pages (from-to)203-206
Number of pages4
JournalPhysics Letters A
Issue number4
StatePublished - Feb 17 1986

Bibliographical note

Funding Information:
We are grateful to Che-ting Chan, M.Y. Chou, Dr. Michel M. Dacorogna, Stephen Fahy, Professor Leo M. Falicov, and Mark S. Hybertsen for many helpful discussions. One of us (RMW) thanks the Conselho Nacional de Desenvolvimento Cientifico e Tecnologico in Brazil for a Doctoral Fellowship, while (SRL) acknowledges the University of California at Berkeley for support through a Chancellor's Postdoctoral Fellowship for the 1983-85 academic years. Support for this work was provided by NSF Grant No. DMR8319024 and by the Director, Office of Energy Research, Office of Basic Energy Sciences, Material Science Division of the U.S. Department of Energy under Contract No. DE-ACO3-76SF00098.


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