Electronic charge densities at valence and conduction band edges of ZnSe and CdTe

Renata M. Wentzcovitch; Steven L. Richardson; Marvin L. Cohen

doi:10.1016/0375-9601(86)90207-0

Electronic charge densities at valence and conduction band edges of ZnSe and CdTe

Renata M. Wentzcovitch, Steven L. Richardson, Marvin L. Cohen

Materials Research Science & Engineering Center

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

The empirical pseudopotential method (EPM) is used to calculate electronic charge densities at selected k points of the valence and conduction band edges of two II-VI semiconductors: ZnSe and CdTe.

Original language	English (US)
Pages (from-to)	203-206
Number of pages	4
Journal	Physics Letters A
Volume	114
Issue number	4
DOIs	https://doi.org/10.1016/0375-9601(86)90207-0
State	Published - Feb 17 1986

Bibliographical note

Funding Information:
We are grateful to Che-ting Chan, M.Y. Chou, Dr. Michel M. Dacorogna, Stephen Fahy, Professor Leo M. Falicov, and Mark S. Hybertsen for many helpful discussions. One of us (RMW) thanks the Conselho Nacional de Desenvolvimento Cientifico e Tecnologico in Brazil for a Doctoral Fellowship, while (SRL) acknowledges the University of California at Berkeley for support through a Chancellor's Postdoctoral Fellowship for the 1983-85 academic years. Support for this work was provided by NSF Grant No. DMR8319024 and by the Director, Office of Energy Research, Office of Basic Energy Sciences, Material Science Division of the U.S. Department of Energy under Contract No. DE-ACO3-76SF00098.

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title = "Electronic charge densities at valence and conduction band edges of ZnSe and CdTe",

abstract = "The empirical pseudopotential method (EPM) is used to calculate electronic charge densities at selected k points of the valence and conduction band edges of two II-VI semiconductors: ZnSe and CdTe.",

author = "Wentzcovitch, {Renata M.} and Richardson, {Steven L.} and Cohen, {Marvin L.}",

note = "Funding Information: We are grateful to Che-ting Chan, M.Y. Chou, Dr. Michel M. Dacorogna, Stephen Fahy, Professor Leo M. Falicov, and Mark S. Hybertsen for many helpful discussions. One of us (RMW) thanks the Conselho Nacional de Desenvolvimento Cientifico e Tecnologico in Brazil for a Doctoral Fellowship, while (SRL) acknowledges the University of California at Berkeley for support through a Chancellor's Postdoctoral Fellowship for the 1983-85 academic years. Support for this work was provided by NSF Grant No. DMR8319024 and by the Director, Office of Energy Research, Office of Basic Energy Sciences, Material Science Division of the U.S. Department of Energy under Contract No. DE-ACO3-76SF00098.",

year = "1986",

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doi = "10.1016/0375-9601(86)90207-0",

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T1 - Electronic charge densities at valence and conduction band edges of ZnSe and CdTe

AU - Wentzcovitch, Renata M.

AU - Richardson, Steven L.

AU - Cohen, Marvin L.

N1 - Funding Information: We are grateful to Che-ting Chan, M.Y. Chou, Dr. Michel M. Dacorogna, Stephen Fahy, Professor Leo M. Falicov, and Mark S. Hybertsen for many helpful discussions. One of us (RMW) thanks the Conselho Nacional de Desenvolvimento Cientifico e Tecnologico in Brazil for a Doctoral Fellowship, while (SRL) acknowledges the University of California at Berkeley for support through a Chancellor's Postdoctoral Fellowship for the 1983-85 academic years. Support for this work was provided by NSF Grant No. DMR8319024 and by the Director, Office of Energy Research, Office of Basic Energy Sciences, Material Science Division of the U.S. Department of Energy under Contract No. DE-ACO3-76SF00098.

PY - 1986/2/17

Y1 - 1986/2/17

N2 - The empirical pseudopotential method (EPM) is used to calculate electronic charge densities at selected k points of the valence and conduction band edges of two II-VI semiconductors: ZnSe and CdTe.

AB - The empirical pseudopotential method (EPM) is used to calculate electronic charge densities at selected k points of the valence and conduction band edges of two II-VI semiconductors: ZnSe and CdTe.

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DO - 10.1016/0375-9601(86)90207-0

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JF - Physics Letters A

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ER -

Electronic charge densities at valence and conduction band edges of ZnSe and CdTe

Abstract

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