Electron Velocity Saturation In Heterostructure Field-Effect Transistors

Chien Jih Han, P P Ruden, Thomas E. Nohava, David H. Narum, David E. Grider, K. Newstrom, P. Joslyn, Michael S. Shur

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Abstract

Results on gate-length scaling of the performance of enhancement-mode heterostructure field-effect transistors (HFET's) for gate lengths between 0.4 and 10 μm, are reported. The devices studied were fabricated by a self-aligned gate process. Transconductances as large as 534 mS/mm were achieved with 0.4-μm, devices. We compare two types of pseudomorphic AlGaAs/InGaAs/GaAs heterostructures. One of them is used for modulation-doped FET's and the other for doped-channel FET's. We find that the effects of electron velocity saturation are different for the two types of devices due to the dominance of charge transfer and gate leakage in the conventional modulation-doped device. The experimental results are explained in the framework of a simple charge control model.

Original languageEnglish (US)
Pages (from-to)530-535
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume37
Issue number3
DOIs
StatePublished - Mar 1990

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    Han, C. J., Ruden, P. P., Nohava, T. E., Narum, D. H., Grider, D. E., Newstrom, K., Joslyn, P., & Shur, M. S. (1990). Electron Velocity Saturation In Heterostructure Field-Effect Transistors. IEEE Transactions on Electron Devices, 37(3), 530-535. https://doi.org/10.1109/16.47754