Electron Velocity Saturation In Heterostructure Field-Effect Transistors

Chien Jih Han; P P Ruden; Thomas E. Nohava; David H. Narum; David E. Grider; K. Newstrom; P. Joslyn; Michael S. Shur

doi:10.1109/16.47754

Electron Velocity Saturation In Heterostructure Field-Effect Transistors

Chien Jih Han, P P Ruden, Thomas E. Nohava, David H. Narum, David E. Grider, K. Newstrom, P. Joslyn, Michael S. Shur

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Results on gate-length scaling of the performance of enhancement-mode heterostructure field-effect transistors (HFET's) for gate lengths between 0.4 and 10 μm, are reported. The devices studied were fabricated by a self-aligned gate process. Transconductances as large as 534 mS/mm were achieved with 0.4-μm, devices. We compare two types of pseudomorphic AlGaAs/InGaAs/GaAs heterostructures. One of them is used for modulation-doped FET's and the other for doped-channel FET's. We find that the effects of electron velocity saturation are different for the two types of devices due to the dominance of charge transfer and gate leakage in the conventional modulation-doped device. The experimental results are explained in the framework of a simple charge control model.

Original language	English (US)
Pages (from-to)	530-535
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	37
Issue number	3
DOIs	https://doi.org/10.1109/16.47754
State	Published - Mar 1990

Bibliographical note

Funding Information:
Manuscript received July 31, 1989; revised October 17, 1989. This work was supported by Air Force Contract F33615-86-C-1128 monitored by M. Curtis of Wright-Patterson Air Force Base. The review of this paper was arranged by Associate Editor S.-S. Pei.

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title = "Electron Velocity Saturation In Heterostructure Field-Effect Transistors",

abstract = "Results on gate-length scaling of the performance of enhancement-mode heterostructure field-effect transistors (HFET's) for gate lengths between 0.4 and 10 μm, are reported. The devices studied were fabricated by a self-aligned gate process. Transconductances as large as 534 mS/mm were achieved with 0.4-μm, devices. We compare two types of pseudomorphic AlGaAs/InGaAs/GaAs heterostructures. One of them is used for modulation-doped FET's and the other for doped-channel FET's. We find that the effects of electron velocity saturation are different for the two types of devices due to the dominance of charge transfer and gate leakage in the conventional modulation-doped device. The experimental results are explained in the framework of a simple charge control model.",

author = "Han, {Chien Jih} and Ruden, {P P} and Nohava, {Thomas E.} and Narum, {David H.} and Grider, {David E.} and K. Newstrom and P. Joslyn and Shur, {Michael S.}",

note = "Funding Information: Manuscript received July 31, 1989; revised October 17, 1989. This work was supported by Air Force Contract F33615-86-C-1128 monitored by M. Curtis of Wright-Patterson Air Force Base. The review of this paper was arranged by Associate Editor S.-S. Pei.",

year = "1990",

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doi = "10.1109/16.47754",

language = "English (US)",

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journal = "IEEE Transactions on Electron Devices",

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T1 - Electron Velocity Saturation In Heterostructure Field-Effect Transistors

AU - Han, Chien Jih

AU - Ruden, P P

AU - Nohava, Thomas E.

AU - Narum, David H.

AU - Grider, David E.

AU - Newstrom, K.

AU - Joslyn, P.

AU - Shur, Michael S.

N1 - Funding Information: Manuscript received July 31, 1989; revised October 17, 1989. This work was supported by Air Force Contract F33615-86-C-1128 monitored by M. Curtis of Wright-Patterson Air Force Base. The review of this paper was arranged by Associate Editor S.-S. Pei.

PY - 1990/3

Y1 - 1990/3

N2 - Results on gate-length scaling of the performance of enhancement-mode heterostructure field-effect transistors (HFET's) for gate lengths between 0.4 and 10 μm, are reported. The devices studied were fabricated by a self-aligned gate process. Transconductances as large as 534 mS/mm were achieved with 0.4-μm, devices. We compare two types of pseudomorphic AlGaAs/InGaAs/GaAs heterostructures. One of them is used for modulation-doped FET's and the other for doped-channel FET's. We find that the effects of electron velocity saturation are different for the two types of devices due to the dominance of charge transfer and gate leakage in the conventional modulation-doped device. The experimental results are explained in the framework of a simple charge control model.

AB - Results on gate-length scaling of the performance of enhancement-mode heterostructure field-effect transistors (HFET's) for gate lengths between 0.4 and 10 μm, are reported. The devices studied were fabricated by a self-aligned gate process. Transconductances as large as 534 mS/mm were achieved with 0.4-μm, devices. We compare two types of pseudomorphic AlGaAs/InGaAs/GaAs heterostructures. One of them is used for modulation-doped FET's and the other for doped-channel FET's. We find that the effects of electron velocity saturation are different for the two types of devices due to the dominance of charge transfer and gate leakage in the conventional modulation-doped device. The experimental results are explained in the framework of a simple charge control model.

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DO - 10.1109/16.47754

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EP - 535

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 3

ER -

Electron Velocity Saturation In Heterostructure Field-Effect Transistors

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