Electron tunneling in ErRh4B4

C. P. Umbach, L. E. Toth, E. D. Dahlberg, A. M. Goldman

Research output: Contribution to journalArticlepeer-review

12 Scopus citations


Thin film tunneling junctions of ErRh4B4 with counterelectrodes of Mg, In, Pb and Al have been formed using an artifical barrier of oxidized Er. Measurements of the tunneling characteristics indicate that the maximum value of 2Δ kBTc for ErRh4B4 is at least 4.2.

Original languageEnglish (US)
Pages (from-to)803-804
Number of pages2
JournalPhysica B+C
Issue number1-3
StatePublished - 1981


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