Electron transport properties of InN

R. E. Jones, H. C.M. Van Genuchten, S. X. Li, L. Hsu, K. M. Yu, W. Walukiewicz, J. W. Ager, E. E. Haller, H. Lu, W. J. Schaff

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Scopus citations


High-energy particle irradiation has been used to control the free electron concentration and electron mobility in InN by introducing native point defects that act as donors. A direct comparison between theoretical calculations and the experimental electron mobility suggests that scattering by triply-charged donor defects limits the mobility in irradiated samples across the entire range of electron concentrations studied. Thermal annealing of irradiated films in the temperature range 425°C to 475°C results in large increases in the electron mobility that approach the values predicted for singly-ionized donor defect scattering. It is suggested that the radiation-induced donor defects are stable, singly-charged nitrogen vacancies, and triply-charged, relaxed indium vacancy complexes that are removed by the annealing.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
Number of pages6
StatePublished - 2006
Event2005 Materials Research Society Fall Meeting - Boston, MA, United States
Duration: Nov 28 2005Dec 2 2005

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Other2005 Materials Research Society Fall Meeting
Country/TerritoryUnited States
CityBoston, MA


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