@inproceedings{87239e38d6f44c10b1574d9f4b374952,
title = "Electron transport properties of InN",
abstract = "High-energy particle irradiation has been used to control the free electron concentration and electron mobility in InN by introducing native point defects that act as donors. A direct comparison between theoretical calculations and the experimental electron mobility suggests that scattering by triply-charged donor defects limits the mobility in irradiated samples across the entire range of electron concentrations studied. Thermal annealing of irradiated films in the temperature range 425°C to 475°C results in large increases in the electron mobility that approach the values predicted for singly-ionized donor defect scattering. It is suggested that the radiation-induced donor defects are stable, singly-charged nitrogen vacancies, and triply-charged, relaxed indium vacancy complexes that are removed by the annealing.",
author = "Jones, {R. E.} and {Van Genuchten}, {H. C.M.} and Li, {S. X.} and L. Hsu and Yu, {K. M.} and W. Walukiewicz and Ager, {J. W.} and Haller, {E. E.} and H. Lu and Schaff, {W. J.}",
year = "2006",
language = "English (US)",
isbn = "1558998462",
series = "Materials Research Society Symposium Proceedings",
pages = "105--110",
booktitle = "Materials Research Society Symposium Proceedings",
note = "2005 Materials Research Society Fall Meeting ; Conference date: 28-11-2005 Through 02-12-2005",
}