Electron spin flip scattering in graphene due to substrate impurities

Aditi Goswami, Yue Liu, Feilong Liu, P. Paul Ruden, Darryl L. Smith

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations


Graphene is a promising material for electronic and spintronic applications due to its high carrier mobility and low intrinsic spin-orbit interaction. However, extrinsic effects may easily dominate intrinsic scattering mechanisms. The scattering mechanisms investigated here are associated non-magnetic, charged impurities in the substrate (e.g. SiO2) beneath the graphene layer. Such impurities cause an electric field that extends through the graphene and has a non- vanishing perpendicular component. Consequently, the impurity, in addition to the conventional elastic, spin-conserving scattering can give rise to spin-flip processes. The latter is a consequence of a spatially varying Rashba spin-orbit interaction caused by the electric field of the impurity in the substrate. Scattering cross-sections are calculated and, for assumed impurity distributions, relaxation times are estimated.

Original languageEnglish (US)
Title of host publicationCarbon Nanomaterials
PublisherMaterials Research Society
Number of pages6
ISBN (Print)9781632660985
StatePublished - 2013
Event2012 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 25 2012Nov 30 2012

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Other2012 MRS Fall Meeting
Country/TerritoryUnited States
CityBoston, MA


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