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Electron scattering mechanisms at polar GaN/AlGaN interfaces
Leonardo Hsu
, W. Walukiewicz
Curriculum and Instruction
Research output
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Contribution to journal
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Conference article
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peer-review
1
Scopus citations
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Keyphrases
Electron Scattering
100%
Aluminum Gallium Nitride (AlGaN)
100%
Scattering Mechanism
100%
Electron Mobility
50%
2-dimensional Electron Gas (2DEG)
50%
GaN Heterostructure
50%
Coulomb Scattering
50%
Alloy Disorder Scattering
50%
AlGaN Barrier
50%
Low Temperature
25%
High Density
25%
Strain-induced
25%
Undoped
25%
Piezoelectric Field
25%
Scattering Processes
25%
Growth Temperature
25%
Charge Transfer
25%
Acoustic Phonons
25%
Thermodynamic Equilibrium
25%
Gas Density
25%
Quantum Lifetime
25%
Material Science
Heterojunction
100%
Density
100%
Electron Mobility
100%
Piezoelectricity
50%
Surface (Surface Science)
50%
Density of Gases
50%
Chemistry
Two-Dimensional Electron Gas
100%
Electron Mobility
100%
Electron Scattering
100%
Donor
50%
formation
50%
Acoustic Phonon
50%
Physics
Electron Scattering
100%
Electron Mobility
100%
Electron Gas
100%
Piezoelectricity
50%
Thermodynamic Equilibrium
50%
Phonon
50%