Electron scattering by native defects in III-V nitrides and their alloys

L. Hsu, W. Walukiewicz

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations


We have calculated the electron mobilities in GaN and InN taking into consideration scattering by short range potentials, in addition to all standard scattering mechanisms. These potentials are produced by the native defects which are responsible for the high electron concentrations in nominally undoped nitrides. Comparison of the calculated mobilities with experimental data shows that scattering by short range potentials is the dominant mechanism limiting the electron mobilities in unintentionally doped nitrides with large electron concentrations. In the case of AlxGa1-xN alloys, the reduction in the electron concentration due to the upward shift of the conduction band relative to the native defect level can account for the experimentally measured mobilities. Resonant scattering is shown to be important when the defect and Fermi levels are close in energy.

Original languageEnglish (US)
Pages (from-to)513-518
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - Dec 1 1996
EventProceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA
Duration: Apr 8 1996Apr 12 1996


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