Electron-hole correlations in Si under uniaxial stress

Tapash Chakraborty, C. E. Campbell

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


Using the many-body variational approach as input, we have evaluated the lifetime of the electron-hole drop in Si under uniaxial stress. Comparing our results with the recent experimental values, we notice that the electron-hole correlations obtained in our approach has the correct density variation. The theoretical lifetime obtained in the Auger recombination process compares reasonably well with the measured lifetime.

Original languageEnglish (US)
Pages (from-to)195-198
Number of pages4
JournalSolid State Communications
Issue number2
StatePublished - Jan 1983


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