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Electron cyclotron resonance plasma reactor for cryogenic etching
Eray S. Aydil
, Jeffrey A. Gregus
, Richard A. Gottscho
Chemical Engineering and Materials Science
Research output
:
Contribution to journal
›
Article
›
peer-review
19
Scopus citations
Overview
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Keyphrases
Plasma Reactor
100%
Wafer Temperature
100%
Cryogenic Etching
100%
Electron Cyclotron Resonance Plasma
100%
Plasma Uniformity
75%
Plasma Density Profile
75%
Temperature Control
50%
Ion Energy Control
50%
Low Temperature
25%
Magnetic Field
25%
Particle Transport
25%
Controlled Temperature
25%
Compound Semiconductors
25%
Heat Flux
25%
Chemical Processes
25%
Wafer Surface
25%
Wave Propagation
25%
Submicron
25%
Density Profile
25%
Reactor Design
25%
Strong Coupling
25%
Operating Parameters
25%
Hollow
25%
Wafer
25%
Low Pressure
25%
Refraction
25%
Langmuir Probe
25%
Thermometry
25%
Charged Particles
25%
Pressure Field
25%
Ion Current
25%
Microwave Absorption
25%
Microwave Energy
25%
Ar Plasma
25%
Ion Density
25%
Integrated Circuit Manufacturing
25%
DC Bias
25%
Etching Rate
25%
Sample Temperature
25%
Laser Interferometric
25%
Wafer Heating
25%
Infrared Laser
25%
Ion Energy
25%
Magnetic Plasma
25%
Electron Cyclotron Resonance
25%
Monitoring Temperature
25%
Field of Power
25%
Magnetic Field Density
25%
Floating Potential
25%
Over-etching
25%
Etching Anisotropy
25%
Temperature Transient
25%
Ultra-large-scale
25%
Ion Saturation Current
25%
Etch Selectivity
25%
Device Yield
25%
Charging Damage
25%
Microwave Magnetic Field
25%
Superior Selectivity
25%
Physics
Electron Cyclotron Resonance
100%
Plasma Density
60%
Selectivity
40%
Magnetic Field
40%
Temperature Control
40%
Infrared Laser
20%
Wave Propagation
20%
Linewidth
20%
Electrostatic Probe
20%
Integrated Circuit
20%
Anisotropy
20%
Pressure Distribution
20%
Ion Current
20%
Material Science
Plasma Density
100%
Density
66%
Surface (Surface Science)
66%
Electronic Circuit
33%
Anisotropy
33%
Compound Semiconductor
33%
Particle Transport
33%
Linewidth
33%
Chemical Engineering
Cryogenics
100%
Heat Flux
50%
Anisotropy
50%
Engineering
Electron cyclotron resonance plasma
100%