Abstract
Electron collimation via a graphene p-n junction allows electrostatic control of ballistic electron trajectories akin to that of an optical circuit. Similar manipulation of novel correlated electronic phases in twisted-bilayer graphene (tBLG) can provide additional probes to the underlying physics and device components toward advanced quantum electronics. In this work, we demonstrate collimation of the electron flow via gate-defined moiré barriers in a tBLG device, utilizing the band-insulator gap of the moiré superlattice. A single junction can be tuned to host a chosen combination of conventional pseudo barrier and moiré tunnel barriers, from which we demonstrate improved collimation efficiency. By measuring transport through two consecutive moiré collimators separated by 1 μm, we demonstrate evidence of electron collimation in tBLG in the presence of realistic twist-angle inhomogeneity.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 12508-12514 |
| Number of pages | 7 |
| Journal | Nano letters |
| Volume | 24 |
| Issue number | 40 |
| DOIs | |
| State | Published - Oct 9 2024 |
Bibliographical note
Publisher Copyright:© 2024 The Authors. Published by American Chemical Society.
Keywords
- Band-Insulator Gap
- Electron Collimation
- Gate-Defined Junction
- Moiré Barrier
- Twisted Bilayer Graphene
PubMed: MeSH publication types
- Journal Article