Electron-bombarded silicon avalanche diode PMT development

C. B. Johnson, Mike J. Iosue, R. Rusack, P. Cushman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A 16 mm active diameter photomultiplier tube (PMT) having an electron-bombarded silicon avalanche diode electron multiplier is shown to have promise as a replacement for PMTs with conventional discrete dynode or channel electron multipliers. Any type of conventional photocathode, e.g. uv-sensitive, bialkali or multialkali types, as well as negative electron affinity GaAs types can be used. The full potential of the high detective quantum efficiency of the GaAs cathode can be realized for the first time in a photoelectronic detector because of the nearly complete utilization of the photoelectrons. Key performance characteristics are gain to about 1E6 e/e, linear dynamic range for dc operation to about 1E6, insensitivity to strong magnetic fields, and a counting efficiency of about 80%.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsSankaran Gowrinathan, James F. Shanley, C.B. Johnson
PublisherPubl by Society of Photo-Optical Instrumentation Engineers
Pages345-349
Number of pages5
ISBN (Print)0819411884
StatePublished - Dec 1 1993
EventSurveillance Technologies and Imaging Components - Orlando, FL, USA
Duration: Apr 13 1993Apr 14 1993

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume1952
ISSN (Print)0277-786X

Other

OtherSurveillance Technologies and Imaging Components
CityOrlando, FL, USA
Period4/13/934/14/93

Fingerprint Dive into the research topics of 'Electron-bombarded silicon avalanche diode PMT development'. Together they form a unique fingerprint.

Cite this