TY - JOUR
T1 - Electrolyte gate-controlled kondo effect in SrTiO 3
AU - Lee, Menyoung
AU - Williams, J. R.
AU - Zhang, Sipei
AU - Frisbie, C. Daniel
AU - Goldhaber-Gordon, D.
PY - 2011/12/12
Y1 - 2011/12/12
N2 - We report low-temperature, high-field magnetotransport measurements of SrTiO 3 gated by an ionic gel electrolyte. A saturating resistance upturn and negative magnetoresistance that signal the emergence of the Kondo effect appear for higher applied gate voltages. This observation, enabled by the wide tunability of the ionic gel-applied electric field, promotes the interpretation of the electric field-effect-induced 2D electron system in SrTiO 3 as an admixture of magnetic Ti3 + ions, i.e., localized and unpaired electrons, and delocalized electrons that partially fill the Ti 3d conduction band.
AB - We report low-temperature, high-field magnetotransport measurements of SrTiO 3 gated by an ionic gel electrolyte. A saturating resistance upturn and negative magnetoresistance that signal the emergence of the Kondo effect appear for higher applied gate voltages. This observation, enabled by the wide tunability of the ionic gel-applied electric field, promotes the interpretation of the electric field-effect-induced 2D electron system in SrTiO 3 as an admixture of magnetic Ti3 + ions, i.e., localized and unpaired electrons, and delocalized electrons that partially fill the Ti 3d conduction band.
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U2 - 10.1103/PhysRevLett.107.256601
DO - 10.1103/PhysRevLett.107.256601
M3 - Article
AN - SCOPUS:83655165006
SN - 0031-9007
VL - 107
JO - Physical review letters
JF - Physical review letters
IS - 25
M1 - 256601
ER -