Electroluminescent devices have been fabricated in an indium-tin-oxide glass (ITO)/emissive layer/Al structure. The emissive layer is obtained by spin coating a mixture of: poly(N-vinylcarbazole) (PVK) and 2,5-bis(5-tert-butyl-2-benzoxazolyl)-thiophene (BBOT) or PVK, BBOT and a hole injection and transportation molecule N,N′-diphenyl-N,N′-bis(3-methylphenyl)-[1,1-biphenyl]-4,4′-dia mine (TPD). In the ITO/PVK:BBOT/Al structure, the device performance is dominated by the exciplex formed between PVK and BBOT with an emission peak at 480 nm. In the ITO/PVK:TPD:BBOT/Al structure the device emission color is red - shifted to 539 nm, due to the stronger exciplex interaction of BBOT with TPD.
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