Electrically bistable nonvolatile switching devices fabricated with a high performance polyimide bearing diphenylcarbamyl moieties

Suk Gyu Hahm, Seungchel Choi, Sang Hyun Hong, Taek Joon Lee, Samdae Park, Dong Min Kim, Jin Chul Kim, Wonsang Kwon, Kyungtae Kim, Mee Jung Kim, Ohyun Kim, Moonhor Ree

Research output: Contribution to journalArticlepeer-review

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Abstract

In this study, novel nonvolatile memory devices, based on a high performance polyimide, poly(3,3′-bis(diphenylcarbamyloxy)-4,4′- biphenylene hexafluoroisopropylidenediphthalimide) (6F-HAB-DPC PI), were fabricated with a simple conventional solution coating process. The devices were found to exhibit programmable, rewritable nonvolatile memory characteristics with a high ON/OFF current ratio of up to 109, a long retention time in both ON and OFF states, and low power consumption. Moreover, the active 6F-HAB-DPC PI layer is thermally and dimensionally stable and thus hybridization with a complementary metal-oxide-semiconductor platform is feasible. The advantageous properties and ease of fabrication of the 6F-HAB-DPC PI based devices open up the possibility of the mass production of high performance digital nonvolatile polymer memory devices at low cost.

Original languageEnglish (US)
Pages (from-to)2207-2214
Number of pages8
JournalJournal of Materials Chemistry
Volume19
Issue number15
DOIs
StatePublished - Apr 8 2009

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