Electrical transport of spin-polarized carriers in disordered ultrathin films

L. M. Hernandez, A. Bhattacharya, Kevin A. Parendo, A. M. Goldman

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

Slow, nonexponential relaxation of electrical transport accompanied by memory effects has been induced in quench-condensed ultrathin amorphous Bi films by the application of a parallel magnetic field. This behavior, which is very similar to space-charge limited current flow, is found in extremely thin films well on the insulating side of the thickness-tuned superconductor-insulator transition. It may be the signature of a collective state that forms when the carriers are spin polarized at low temperatures and in high magnetic fields.

Original languageEnglish (US)
JournalPhysical Review Letters
Volume91
Issue number12
DOIs
StatePublished - Jan 1 2003

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