Electrical reliability of metal-organic chemical vapor deposited high permittivity TiO2 dielectric metal-oxide-semiconductor field effect transistors

Hyeon Seag Kim, Stephen A Campbell, D. C. Gilmer

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

The reliability of high permittivity films as a gate insulator is a serious concern due to small bandgaps (3.0 to approximately 4.0 eV). Ramped voltage, time dependent dielectric breakdown, and capacitance-voltage measurements were done on 190 angstroms layers of high permittivity TiO2 which were deposited through the metal-organic chemical vapor deposition of titanium tetrakis-isopropoxide. Measurements of the high and low frequency capacitance indicate that virtually no interface states are created during constant current injection stress. The hot carrier effects was also measured at Vd = 3.5 V and Vg EQ 2 V, but the threshold voltage shift and transconductance were clearly improved rather than degraded. Most of this increase in leakage upon electrical stress may be due to holes stored at the TiO2/SiO2 interface. The stored charge at the interface changes the shape of the bands, allowing a Fowler-Nordheim like tunneling mechanism to occur.

Original languageEnglish (US)
Pages (from-to)90-96
Number of pages7
JournalAnnual Proceedings - Reliability Physics (Symposium)
StatePublished - Jan 1 1997
EventProceedings of the 1997 35th Annual IEEE International Reliability Physics Symposium - Denver, CO, USA
Duration: Apr 8 1997Apr 10 1997

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