Electrical properties of SiO 2 films with embedded nanoparticles formed by SiH 4/O 2 chemical vapor deposition

R. M. Rassel, T. Kim, Z. Shen, S. A. Campbell, P. H. McMurry

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

The electrical properties of silica films with embedded particles formed during low-pressure chemical vapor deposition of silica from silane and oxygen were analyzed. Using an O 2/SiH 4 ratio of 20 the depositions were carried out at pressures and temperatures ranging from 0.3 to 2.0 Torr and 200-800°C. The stoichiometry, particle concentration, dielectric constant and current-voltage characteristics were studied. The results show that at 800°C and 1.5 Torr the distribution is found to be bimodal with modes ∼7 and ∼20 nm.

Original languageEnglish (US)
Pages (from-to)2441-2447
Number of pages7
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume21
Issue number6
StatePublished - Nov 2003

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