The electrical properties of silica films with embedded particles formed during low-pressure chemical vapor deposition of silica from silane and oxygen were analyzed. Using an O 2/SiH 4 ratio of 20 the depositions were carried out at pressures and temperatures ranging from 0.3 to 2.0 Torr and 200-800°C. The stoichiometry, particle concentration, dielectric constant and current-voltage characteristics were studied. The results show that at 800°C and 1.5 Torr the distribution is found to be bimodal with modes ∼7 and ∼20 nm.
|Original language||English (US)|
|Number of pages||7|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - Nov 2003|