Abstract
The electrical properties of silica films with embedded particles formed during low-pressure chemical vapor deposition of silica from silane and oxygen were analyzed. Using an O 2/SiH 4 ratio of 20 the depositions were carried out at pressures and temperatures ranging from 0.3 to 2.0 Torr and 200-800°C. The stoichiometry, particle concentration, dielectric constant and current-voltage characteristics were studied. The results show that at 800°C and 1.5 Torr the distribution is found to be bimodal with modes ∼7 and ∼20 nm.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 2441-2447 |
| Number of pages | 7 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 21 |
| Issue number | 6 |
| State | Published - Nov 2003 |