Electrical measurement of the spin Hall effects in Fe/InxGa 1-xAs heterostructures

E. S. Garlid, Q. O. Hu, C. Geppert, M. K. Chan, C. J. Palmstrom, P. A. Crowell

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

There has been extensive theoretical discussion of the spin Hall effect (SHE) and the various ways that it could be exploited to generate or manipulate spin currents. However, only a handful of recent experiments have investigated this effect, and in semiconductor materials they have relied on optical techniques to either detect or generate spins [1,2].

Original languageEnglish (US)
Title of host publication69th Device Research Conference, DRC 2011 - Conference Digest
Pages155-158
Number of pages4
DOIs
StatePublished - Dec 1 2011
Event69th Device Research Conference, DRC 2011 - Santa Barbara, CA, United States
Duration: Jun 20 2011Jun 22 2011

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Other

Other69th Device Research Conference, DRC 2011
CountryUnited States
CitySanta Barbara, CA
Period6/20/116/22/11

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    Garlid, E. S., Hu, Q. O., Geppert, C., Chan, M. K., Palmstrom, C. J., & Crowell, P. A. (2011). Electrical measurement of the spin Hall effects in Fe/InxGa 1-xAs heterostructures. In 69th Device Research Conference, DRC 2011 - Conference Digest (pp. 155-158). [5994468] (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2011.5994468