Electrical measurement of the direct spin hall effect in Fe/InxGa1-xAs heterostructures

E. S. Garlid, Q. O. Hu, M. K. Chan, C. J. Palmstrøm, P. A. Crowell

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Abstract

We report on an all-electrical measurement of the spin Hall effect in epitaxial Fe/InxGa1-xAs heterostructures with n-type (Si) channel doping and highly doped Schottky tunnel barriers. A transverse spin current generated by an ordinary charge current flowing in the InxGa1-xAs is detected by measuring the spin accumulation at the edges of the channel. The spin accumulation is identified through the observation of a Hanle effect in the voltage measured by pairs of ferromagnetic Hall contacts. We investigate the bias and temperature dependence of the resulting Hanle signal and determine the skew and side-jump contributions to the total spin Hall conductivity.

Original languageEnglish (US)
Article number156602
JournalPhysical review letters
Volume105
Issue number15
DOIs
StatePublished - Oct 4 2010

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