Abstract
We report on an all-electrical measurement of the spin Hall effect in epitaxial Fe/InxGa1-xAs heterostructures with n-type (Si) channel doping and highly doped Schottky tunnel barriers. A transverse spin current generated by an ordinary charge current flowing in the InxGa1-xAs is detected by measuring the spin accumulation at the edges of the channel. The spin accumulation is identified through the observation of a Hanle effect in the voltage measured by pairs of ferromagnetic Hall contacts. We investigate the bias and temperature dependence of the resulting Hanle signal and determine the skew and side-jump contributions to the total spin Hall conductivity.
Original language | English (US) |
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Article number | 156602 |
Journal | Physical review letters |
Volume | 105 |
Issue number | 15 |
DOIs | |
State | Published - Oct 4 2010 |