Electrical measurement of the direct spin hall effect in Fe/InxGa1-xAs heterostructures

E. S. Garlid; Q. O. Hu; M. K. Chan; C. J. Palmstrøm; P. A. Crowell

doi:10.1103/PhysRevLett.105.156602

Electrical measurement of the direct spin hall effect in Fe/InxGa1-xAs heterostructures

E. S. Garlid, Q. O. Hu, M. K. Chan, C. J. Palmstrøm, P. A. Crowell

Physics and Astronomy (Twin Cities)

Research output: Contribution to journal › Article › peer-review

56 Scopus citations

Abstract

We report on an all-electrical measurement of the spin Hall effect in epitaxial Fe/InxGa1-xAs heterostructures with n-type (Si) channel doping and highly doped Schottky tunnel barriers. A transverse spin current generated by an ordinary charge current flowing in the InxGa1-xAs is detected by measuring the spin accumulation at the edges of the channel. The spin accumulation is identified through the observation of a Hanle effect in the voltage measured by pairs of ferromagnetic Hall contacts. We investigate the bias and temperature dependence of the resulting Hanle signal and determine the skew and side-jump contributions to the total spin Hall conductivity.

Original language	English (US)
Article number	156602
Journal	Physical review letters
Volume	105
Issue number	15
DOIs	https://doi.org/10.1103/PhysRevLett.105.156602
State	Published - Oct 4 2010

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10.1103/PhysRevLett.105.156602

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abstract = "We report on an all-electrical measurement of the spin Hall effect in epitaxial Fe/InxGa1-xAs heterostructures with n-type (Si) channel doping and highly doped Schottky tunnel barriers. A transverse spin current generated by an ordinary charge current flowing in the InxGa1-xAs is detected by measuring the spin accumulation at the edges of the channel. The spin accumulation is identified through the observation of a Hanle effect in the voltage measured by pairs of ferromagnetic Hall contacts. We investigate the bias and temperature dependence of the resulting Hanle signal and determine the skew and side-jump contributions to the total spin Hall conductivity.",

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AU - Garlid, E. S.

AU - Hu, Q. O.

AU - Chan, M. K.

AU - Palmstrøm, C. J.

AU - Crowell, P. A.

PY - 2010/10/4

Y1 - 2010/10/4

N2 - We report on an all-electrical measurement of the spin Hall effect in epitaxial Fe/InxGa1-xAs heterostructures with n-type (Si) channel doping and highly doped Schottky tunnel barriers. A transverse spin current generated by an ordinary charge current flowing in the InxGa1-xAs is detected by measuring the spin accumulation at the edges of the channel. The spin accumulation is identified through the observation of a Hanle effect in the voltage measured by pairs of ferromagnetic Hall contacts. We investigate the bias and temperature dependence of the resulting Hanle signal and determine the skew and side-jump contributions to the total spin Hall conductivity.

AB - We report on an all-electrical measurement of the spin Hall effect in epitaxial Fe/InxGa1-xAs heterostructures with n-type (Si) channel doping and highly doped Schottky tunnel barriers. A transverse spin current generated by an ordinary charge current flowing in the InxGa1-xAs is detected by measuring the spin accumulation at the edges of the channel. The spin accumulation is identified through the observation of a Hanle effect in the voltage measured by pairs of ferromagnetic Hall contacts. We investigate the bias and temperature dependence of the resulting Hanle signal and determine the skew and side-jump contributions to the total spin Hall conductivity.

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Electrical measurement of the direct spin hall effect in Fe/InxGa1-xAs heterostructures

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